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7721 Datasheet(PDF) 418 Page - Renesas Technology Corp

Part # 7721
Description  16-BIT SINGLE-CHIP MICROCOMPUTER
PDF  577 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

7721 Datasheet(HTML) 418 Page - Renesas Technology Corp

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APPLICATION
7721 Group User’s Manual
16–15
16.1 Memory connection
_
 When data is output from external memory before falling edge of E signal
_
Because the external memory outputs data before the falling edge of the E signal, there is a
possibility that the tail of address collides with the head of data. In such a case, generate the
__
_
external memory read signal (OE) by using E. (Refer to “Figure 16.1.11.”)
Fig. 16.1.11 Example of making data output timing delayed
Ž When using external memory that outputs data for more than tpzx(E-DLZ/DHZ) after rising edge of
_
E signal
Because the external memory outputs data for more than tpzx(E-DLZ/DHZ) after the rising edge of the
_
E signal, there is a possibility that the tail of data collides with the head of address. In such a case,
try to carry out the following:
q Cut the tail of data output from the memory by using, for example, a bus buffer.
q Use the Mitsubishi’s memory chips that can be connected without a bus buffer.
Figures 16.1.12 to 16.1.15 show examples of using bus buffers and the timing charts. Table 16.1.6
lists the Mitsubishi’s memory chips that can be connected without a bus buffer. When using one
of these memory chips, timing parameters tDF and tdis(OE) listed below are guaranteed. Accordingly,
___
no bus buffer is necessary for the system where the external memory’s read signal (OE) goes high
_
within tpzx(E-DLZ/DHZ)-tDF (or tdis(OE)) [ns] after the rising edge of the E signal.
Table 16.1.6 Mitsubishi’s memory chips that can be connected without bus buffers
Note: Make sure that d
≥ 0 is satisfied when generating the external
memory read signal (OE).
External memory
output enable signal
(Read signal)
Address
ta(OE)
E
OE
Address output
External memory
data output
Specifications of
external memory
d
ten(OE)
Address
Data
Memory
Flash memory
SRAM
Type
M5M28F101AP, FP, J, VP, RV-85, -10
M5M28F102AFP, J, VP-85, -10
M5M5256DP, FP, KP, VP, RV-45LL, -45XL, -55LL, -55XL,
-70LL, -70XL
M5M5278DP, J-12
M5M5278DP, FP, J-15, -15L
M5M5278DP, FP, J-20, -20L
tDF/tdis(OE) (Maximum)
15 ns
(Guaranteed as kit.)
(Note)
6 ns
7 ns
8 ns
Note: tDF or tdis(OE) listed above is guaranteed when these memory chips are connected with the M37721.
When the user wants specifications of these memory chips, add a comment “tDF/tdis(OE) = 15 ns,
microcomputer and kit.”



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