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VG3617801CT Datasheet(PDF) 22 Page - Vanguard International Semiconductor |
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VG3617801CT Datasheet(HTML) 22 Page - Vanguard International Semiconductor |
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22 / 68 page  Document:1G5-0133 Rev.1 Page 22 VIS VG3617801CT 16Mb CMOS Synchronous Dynamic RAM READ to WRITE Command Interval CAS latency=2 CLK Command DQM DQ Hi-Z D0 D3 D2 D1 Read T0 T1 T2 T3 T4 T5 T6 T7 T8 1 cycle Write Burst length=8, CAS latency=2 CLK Command DQM DQ Q0 Read T0 T1 T2 T3 T4 T5 T6 T7 T8 Write T9 necessary Q2 Q1 D0 D2 D1 Hi-Z is example: Burst length=4, CAS latency=3 CLK Command DQM DQ Read T0 T1 T2 T3 T4 T5 T6 T7 T8 Write necessary D0 D2 D1 Hi-Z is Q2 The minimum command interval = (4+1) cycles |
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