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VG3617801CT Datasheet(PDF) 4 Page - Vanguard International Semiconductor |
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VG3617801CT Datasheet(HTML) 4 Page - Vanguard International Semiconductor |
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4 / 68 page ![]() Document:1G5-0133 Rev.1 Page 4 VIS VG3617801CT 16Mb CMOS Synchronous Dynamic RAM Absolute Maximum Ratings Recommended DC Operating Conditions Note 1.Overshoot limit : VIH(MAX.)=VDDQ+2.0V with a pulse width < 3ns 2.Undershoot limit : VIL=VSSQ-2.0V with a pulse < 3ns and -1.5V with a pulse < 5ns Capacitance (Ta=25¢J,f=1MHZ) Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN,VOUT -1.0 to +4.6 V Supply voltage relative to Vss VDD,VDDQ -1.0 to +4.6 V Short circuit output current IOUT 50 mA Power dissipation PD 1.0 W Operating temperature TOPT 0 to + 70 ¢J Operating temperature TSTG -55 to + 125 ¢J Parameter Symbol Min Typ Max Unit Note Supply Voltage VDD 3.0 3.3 3.6 V Input High Voltage, all inputs VIH 2.0 °– VDD+0.3 V 1 Input Low Voltage, all inputs VIL -0.3 °– 0.8 V 2 Parameter Symbol Min Max Unit Input capacitance(CLK) C11 2.5 4 pF Input capacitance(all input pins except data pins) C12 2.5 5 pF Data input/output capacitance CI/O 4.0 6.5 pF |
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