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VG3617801CT Datasheet(PDF) 44 Page - Vanguard International Semiconductor |
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VG3617801CT Datasheet(HTML) 44 Page - Vanguard International Semiconductor |
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44 / 68 page  Document:1G5-0133 Rev.1 Page 44 VIS VG3617801CT 16Mb CMOS Synchronous Dynamic RAM T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 Random Row Read (Interleaving Banks) (1 of 2) CLK CKE CS RAS CAS WE A11(BS) A10 A0~A9 DDM DQ t CK2 Burst Length=8, CAS Latency=2 Activate Bank B Command Read Hi-Z Command RBa QAa0 QAa1 QBa1 QBa2 QBa3 QBa4 QBa5 QBa6 QBa7 Bank B Activate Command Bank A Active Command Bank B Read Command Bank A QBb1 QBb0 QBa0 Read Command Bank B QAa3 QAa4 QAa5 QAa6 QAa7 QAa2 Precharge Command Bank B RAa RBb RBa CBa RAa CAa RBb CBb t RCD t AC2 t RP High |
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