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VG3617801CT Datasheet(PDF) 31 Page - Vanguard International Semiconductor |
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VG3617801CT Datasheet(HTML) 31 Page - Vanguard International Semiconductor |
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31 / 68 page  Document:1G5-0133 Rev.1 Page 31 VIS VG3617801CT 16Mb CMOS Synchronous Dynamic RAM T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 AC Parameters for Read Timing (2 of 2) CLK CKE CS RAS CAS WE A11(BS) A10 A0-A9 DQM DQ Burst Length=2, CAS Latency=3 tLZ t HZ Hi-Z Activate Command Bank A Read Command Bank A Activate Command Bank B Read with Auto Precharge Bank B Precharge Command Bank A Activate Command Bank A t CH tCL t CKS t CK3 t CMS t CMH t AH t AS RAa RAa CAa RBa RBa CBa RAb RAb t RRD t RAS t RC t RP t RCD tAC3 tOH tAC3 QAa0 QAa1 QBa0 QBa1 tOH tHZ Command t CKH Begin Auto Precharge Bank B |
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