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VG3617801CT Datasheet(PDF) 53 Page - Vanguard International Semiconductor |
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VG3617801CT Datasheet(HTML) 53 Page - Vanguard International Semiconductor |
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53 / 68 page  Document:1G5-0133 Rev.1 Page 53 VIS VG3617801CT 16Mb CMOS Synchronous Dynamic RAM T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 Interleaved Column Write Cycle (2 of 2) CLK CKE CS RAS CAS WE A11(BS) A10 A0~A9 DQM DQ t CK3 Burst Length=4, CAS Latency=3 Activate Bank A Command Hi-Z DBb1 DAd0 DAa0 DAa1 DAa2 DAa3 DBa0 DBa1 QAd1 Precharge RAa RBa RAa CAa RBa CBa CBb CBc CAb DAb1 DBc0 DBc1 Write Command Bank A Write Command Bank B DBb0 DAb0 Write Command Bank B Write Command Bank B Write Command Bank A Write Command Bank B Command Bank A t RRD Activate Command Bank B t RCD CBd t DPL t RP QAd2 QAd3 t DPL Precharge Command Bank B |
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