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VG3617801CT Datasheet(PDF) 46 Page - Vanguard International Semiconductor |
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VG3617801CT Datasheet(HTML) 46 Page - Vanguard International Semiconductor |
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46 / 68 page  Document:1G5-0133 Rev.1 Page 46 VIS VG3617801CT 16Mb CMOS Synchronous Dynamic RAM T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 Random Row Write (Interleaving Banks) (1 of 2) CLK CKE CS RAS CAS WE A11(BS) A10 A0~A9 DDM DQ t CK2 Burst Length=8, CAS Latency=2 Activate Bank A Command Write Hi-Z Command RAa QBa0 QBa1 QAa1 QAa2 QAa3 QAa4 QAa5 QAa6 QAa7 Bank A Activate Command Bank B Active Command Bank A Write Command Bank B DAb3 DAb2 QAa0 Write Command Bank A QBa3 QBa4 QBa5 QBa6 QBa7 QBa2 Precharge Command Bank A RBa RAb RAa CAa RBa CBa RAb CAb t RCD t RP High t DPL t DPL DAb0 DAb1 DAb4 Precharge Command Bank B |
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