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VG3617801CT Datasheet(PDF) 47 Page - Vanguard International Semiconductor |
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VG3617801CT Datasheet(HTML) 47 Page - Vanguard International Semiconductor |
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47 / 68 page  Document:1G5-0133 Rev.1 Page 47 VIS VG3617801CT 16Mb CMOS Synchronous Dynamic RAM T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 Random Row Write (Interleaving Banks) (2 of 2) CLK CKE CS RAS CAS WE A11(BS) A10 A0~A9 DDM DQ t CK3 Burst Length=8, CAS Latency=3 Activate Bank A Command Write Hi-Z Command DAa7 DBa0 DAa0 DAa1 DAa2 DAa3 DAa4 DAa5 DAa6 Bank A Activate Command Bank B DAb2 DAb1 Activate Command Bank A DBa2 DBa3 DBa4 QBa5 DBa6 DBa1 Write Command Bank B RAa RBa t RCD t RP High t DPL t DPL DBb7 DAb0 DAb3 Write Command Bank A RAa RBa RAb CAa RBa RAb CBa CAb Precharge Command Bank A Precharge Command Bank B |
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