MPC5606S datasheet(134/136 Pages) FREESCALE

134 / 136 page

MPC5606S Microcontroller Data Sheet, Rev. 6

Freescale Semiconductor

134

(continued)

1 Sep 2010

(continued)

Added the “SMC pad delays” table.

Added the “SSD specifications” section.

In the “I/O consumption” table, added a specification for IDDMxAVG.

Revised the “Fast external crystal oscillator (4–16 MHz) electrical characteristics” table.

In the “Slow external crystal oscillator (32 kHz) electrical characteristics” figure,

changed VOSC32K_XTAL to VSXOSC_XTAL.

In footnote 2 of the “FMPLL electrical characteristics” table, changed “fCPU 64 MHz can

be achieved only at up to 105 °C” to “fCPU 64 MHz can be achieved only at

temperatures up to 105 °C with a maximum FM depth of 2%”.

In the first “Crystal oscillator and resonator connection scheme” figure:

• Swapped “XTAL” and “EXTAL”.

• Deleted RP.

In the second “Crystal oscillator and resonator connection scheme” figure, deleted RF.

Added the “Crystal description” table.

In the “Fast internal RC oscillator (16 MHz) electrical characteristics” table:

• Changed the conditions for



FIRCVAR (was “TA = -25 °C”, is “TA = -40to105°C,

trimmed”), removed the associated footnote, and changed the associated guarantee

method (was P, is C).

• Changed the max specification for IFIRCPWD (was 10 A, is 1 A).

Added the “Resonator description” table.

In the “Fast external crystal oscillator (4 to 16 MHz) electrical characteristics” table,

changed footnote 1 (was “... to 125

C”, is “... to 105 C”).

In the “Slow external crystal oscillator” section, changed “32 kHz” to “32 KHz”.

In the “Slow external crystal oscillator (32 KHz) electrical characteristics” table, added

a footnote to the start-up timing specification.

In the “Slow internal RC oscillator (128 KHz) electrical characteristics” table:

• Changed the condition for



SIRCVAR (was —, is “Trimmed”) and the associated

guarantee method (was P, is C).

• Changed the guarantee method for fSIRC (was P, is C).

Revised the “Program and erase specifications” table.

In the “Flash memory read access timing” table, changed footnote 1 (was “... to 125

C”,

is “... to 105

C”).

Revised the “Flash module life” table.

Added flash read access timing characteristics.

In the “ADC conversion characteristics” table:

• Deleted the entry for TUEp (precision channels are not implemented on this device).

• Changed the specification for INL (was min = -1.5 LSB and max = 1.5 LSB, is

min = max = 2.5 LSB).

• Revised the entry for IINJ (was ±10 mA, is ±5 mA).

• Changed the max specifications for RSW1 (was 3 k, is 1 k) and for RSW2 (was 2

, is 1 k).

Added the “LCD driver electrical characteristics” section.

Revised the table titles in the “Pad AC specifications” section.

Added the “QuadSPI timing” section.

Revised the “JTAG interface timing” table.

Revised the “Nexus debug port timing” table.

Renamed the “Interface to TFT LCD panels—access level” section (is “Interface to TFT

LCD panels”) and revised the table (title and contents) within it.

In the “DSPI timing” table, added a min specification for tCSC (is 20 ns).

In the DSPI section, added a note (referring to the “DSPI timing” table) to each timing

diagram.

Revised the “Ordering information” section.

Table 66. Document revision history

Revision

Date

Substantive changes

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