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THCV231 Datasheet(PDF) 38 Page - THine Electronics, Inc. |
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THCV231 Datasheet(HTML) 38 Page - THine Electronics, Inc. |
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38 / 56 page ![]() THCV231_THCV236_Rev.2.30_E Copyright©2016 THine Electronics, Inc. THine Electronics, Inc. 38/56 Security E Absolute Maximum Ratings Table 37. Absolute Maximum Ratings Parameter Min Typ Max Unit Supply Voltage(VDD,AVDD) -0.3 - 4.0 V LVCMOS Input Voltage -0.3 - VDD+0.3 V LVCMOS Output Voltage -0.3 - VDD+0.3 V LVCMOS Bi-directional buffer Input Voltage -0.3 - VDD+0.3 V LVCMOS Bi-directional buffer Output Voltage -0.3 - VDD+0.3 V Open-Drain Output Voltage -0.3 - 4.0 V CML Receiver Input Voltage -0.3 - CAPINA+0.3 V CML Transmitter Output Voltage -0.3 - CAPINA+0.3 V CML Bi-directional buffer Input Voltage -0.3 - VDD+0.3 V CML Bi-directional buffer Output Voltage -0.3 - VDD+0.3 V Output Current -50 - 50 mA Storage temperature -55 - 125 °C Junction temperature - - 125 °C Reflow Peak Temperature/Time - - 260/10 °C/sec Maximum Power Dissipation @+25°C - - 2.5 W Recommended Operating Conditions Table 38. Recommended Operating Condition Parameter Min Typ Max Unit Supply Voltage(VDD,AVDD) 1.7 - 3.6 V Operating Temperature -40 - 105 °C Electrical Specification LVCMOS DC Specification Table 39. LVCMOS DC Specification Symbol Parameter Pin Type Condition Min Typ Max Unit VIH High Level Input Voltage I VDD=1.7-2.0V 0.65×VDD - VDD V VDD=2.0-3.0V 0.70×VDD - VDD V VDD=3.0-3.6V 2.0 - VDD V IL,B VDD=1.7-3.6V 0.70×VDD - VDD V VIL Low Level Input Voltage I VDD=1.7-2.0V 0 - 0.35×VDD V VDD=2.0-3.0V 0 - 0.30×VDD V VDD=3.0-3.6V 0 - 0.8 V IL,B VDD=1.7-3.6V 0 - 0.30×VDD V VOH High Level Output Voltage O,B VDD=1.7-3.6V IOH=-4mA VDD-0.45 - VDD V VOL Low Level Output Voltage O,B VDD=1.7-3.6V IOL=4mA 0 - 0.45 V BO VDD=1.7-3.6V IOL=2mA 0 - 0.2 V IIH Input Leak Current High I,IL VIN=VDD - - 10 uA IIL Input Leak Current Low I,IL VIN=0V -10 - - uA IOZH Output Leak Current High in Hi-Z State O,B,BO VIN=VDD - - 10 uA IOZL Output Leak Current Low in Hi-Z State O,B,BO VIN=0V -10 - 10 uA |
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