S29WS064N0LBAI011 datasheet(3/99 Pages) SPANSION

3 / 99 page

Publication Number S29WS-N_00

Revision G Amendment 0 Issue Date January 25, 2005

General Description

The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst

mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate

banks using separate data and address pins. These products can operate up to 80 MHz and use a single VCC of

1.7 V to 1.95 V that makes them ideal for today’s demanding wireless applications requiring higher density, better per-

formance and lowered power consumption.

Distinctive Characteristics

Single 1.8 V read/program/erase (1.70–1.95 V)

110 nm MirrorBit™ Technology

Simultaneous Read/Write operation with zero

latency

32-word Write Buffer

Sixteen-bank architecture consisting of 16/8/4

Mwords for WS256N/128N/064N, respectively

Four 16 Kword sectors at both top and bottom of

memory array

254/126/62 64 Kword sectors (WS256N/128N/

064N)

Programmable burst read modes

— Linear for 32, 16 or 8 words linear read with or

without wrap-around

— Continuous sequential read mode

SecSi™ (Secured Silicon) Sector region consisting

of 128 words each for factory and customer

20-year data retention (typical)

Cycling Endurance: 100,000 cycles per sector

(typical)

RDY output indicates data available to system

Command set compatible with JEDEC (42.4)

standard

Hardware (WP#) protection of top and bottom

sectors

Dual boot sector configuration (top and bottom)

Offered Packages

— WS064N: 80-ball FBGA (7 mm x 9 mm)

— WS256N/128N: 84-ball FBGA (8 mm x 11.6 mm)

Low VCC write inhibit

Persistent and Password methods of Advanced

Sector Protection

Write operation status bits indicate program and

erase operation completion

Suspend and Resume commands for Program and

Erase operations

Unlock Bypass program command to reduce

programming time

Synchronous or Asynchronous program operation,

independent of burst control register settings

ACC input pin to reduce factory programming time

Support for Common Flash Interface (CFI)

Industrial Temperature range (contact factory)

Performance Characteristics

S29WS-N MirrorBit™ Flash Family

S29WS256N, S29WS128N, S29WS064N

256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only

Simultaneous Read/Write, Burst Mode Flash Memory

Data Sheet

ADVANCE

INFORMATION

Read Access Times

Speed Option (MHz)

Max. Synch. Latency, ns (tIACC)80

Max. Synch. Burst Access, ns (tBACC)

11.2

13.5

Max. Asynch. Access Time, ns (tACC)80

Max CE# Access Time, ns (tCE)80

Max OE# Access Time, ns (tOE)

13.5

Current Consumption (typical values)

Continuous Burst Read @ 66 MHz

35 mA

Simultaneous Operation (asynchronous)

50 mA

Program (asynchronous)

19 mA

Erase (asynchronous)

19 mA

Standby Mode (asynchronous)

20 µA

Typical Program & Erase Times

Single Word Programming

40 µs

Effective Write Buffer Programming (VCC) Per Word

9.4 µs

Effective Write Buffer Programming (VACC) Per Word

6 µs

Sector Erase (16 Kword Sector)

150 ms

Sector Erase (64 Kword Sector)

600 ms

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