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AM625 Datasheet(PDF) 95 Page - Texas Instruments |
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AM625 Datasheet(HTML) 95 Page - Texas Instruments |
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95 / 235 page ![]() over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT RPD Pull-down Resistor 15 22 30 kΩ RPD Pull-down Resistor 15 22 30 kΩ VOL Output Low Voltage 0.4 V VOH Output High Voltage 2.4 V IOL (2) Low Level Output Current VOL(MAX) 5 mA IOH (2) High Level Output Current VOH(MIN) 9 mA SRI Input Slew Rate TBD TBD TBD V/s (1) VDD stands for corresponding power supply. For more information on the power supply name and the corresponding ball(s), see POWER column of the Pin Attributes table. (2) The IOL and IOH parameters define the minimum Low Level Output Current and High Level Output Current for which the device is able to maintain the specified VOL and VOH values. Values defined by these parameters should be considered the maximum current available to a system implementation which needs to maintain the specified VOL and VOH values for attached components. 7.7.6 CSI Electrical Characteristics Note CSIRX0 is compliant with MIPI DPHY v1.2 dated August 1, 2014 including ECNs and Errata as applicable 7.7.7 USB2PHY Electrical Characteristics Note USB0 interface is compliant with Universal Serial Bus Revision 2.0 Specification dated April 27, 2000 including ECNs and Errata as applicable. 7.7.8 DDR Electrical Characteristics Note The DDR interface is compatible with DDR4 and LPDDR4 devices 7.8 VPP Specifications for One-Time Programmable (OTP) eFuses This section specifies the operating conditions required for programming the OTP eFuses . 7.8.1 Recommended Operating Conditions for OTP eFuse Programming over operating junction temperature range (unless otherwise noted) PARAMETER DESCRIPTION MIN NOM MAX UNIT VDD_CORE Supply voltage range for the core domain during OTP operation; OPP NOM (BOOT) See Section 7.4 V VPP Supply voltage range for the eFuse ROM domain during normal operation without hardware support to program eFuse ROM NC(1) V Supply voltage range for the eFuse ROM domain during normal operation with hardware support to program eFuse ROM 0 V Supply voltage range for the eFuse ROM domain during OTP programming(2) 1.71 1.8 1.89 V I(VPP) VPP current TBD mA SR(VPP) VPP Slew Rate 6E + 4 V/s www.ti.com AM625, AM623 SPRSP58 – JUNE 2022 Copyright © 2022 Texas Instruments Incorporated Submit Document Feedback 95 Product Folder Links: AM625 AM623 |
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