TMPR4925 datasheet(569/590 Pages) TOSHIBA

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Chapter 22 Electrical Characteristics

22-3

22.3.2

DC Characteristics Except for PCI Interface

(Tc = 0 ~ 70

°C, VCCIO = 3.3 V ± 0.3 V, VCCInt = 1.5 V ± 0.1 V, VSS = 0 V)

Parameter

SYM

Conditions

Min.

Max.

Unit

Low-level input voltage

VILPCI

(1)

-0.5

0.9

High-level input voltage

VIHPCI

(1)

1.8

VCCIO + 0.3

High-level output voltage

VOHPCI

(2) IOUT = −500 µAVCCIO × 0.9



Low-level output voltage

VOLPCI

(2) IOUT = 1500 µA



VCCIO × 0.1

Input leakage current

IIHPCI

IILPCI

(1) 0 < VIN < VCCIO

-10

µA

(1): PCICLKIO, PCIAD[31:0], C_BE[3:0], PAR, FRAME*, IRDY*, TRDY*, STOP*, ID_SEL, DEVSEL*, REQ[3:0]*, GNT[3:0]*,

PERR*, SERR

(2): All PCI interface except ID SEL.

22.4 Power Circuit for PLL

22.4.1

Recommended Circuit for PLL

Parameter

Symbol

AS a Reference Value

Unit

Resistor

5.6

Ω

Inductance

2.2

µH

Capacitor

µF

VddInt / VddPLL

1.5

± 0.1

Note: Reference

Figure 22.4.1 Power Circuit for PLL

TX4925

Vss

VddInt

PLL1Vdd_A

PLL1Vss A

C1, C2, C3, R, and L should be placed as

closed to the processor as possible.

TMPR4925 Datasheet(PDF) 569 Page - Toshiba Semiconductor

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