TMS320DM355 datasheet(106/153 Pages) TI

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TMS320DM355

Digital Media System-on-Chip (DMSoC)

SPRS463 – SEPTEMBER 2007

5.7.1.3

AEMIF Electrical Data/Timing

Table 5-13. Timing Requirements for Asynchronous Memory Cycles for AEMIF Module(1) (see Figure 5-14

and Figure 5-15)

DM355

UNIT

MIN

Nom

MAX

READS and WRITES

Pulse duration, EM_WAIT assertion and

tw(EM_WAIT)

deassertion

READS

tsu(EMDV-EMOEH)

Setup time, EM_D[15:0] valid before EM_OE high

th(EMOEH-EMDIV)

Hold time, EM_D[15:0] valid after EM_OE high

tsu(EMOEL-

Delay time from EM_OE low to EM_WAIT

EMWAIT)

asserted(2)

READS (OneNAND Synchronous Burst Read)

Setup time, EM_D[15:0] valid before EM_CLK

tsu(EMDV-EMCLKH)

high

th(EMCLKH-EMDIV)

Hold time, EM_D[15:0] valid after EM_CLK high

WRITES

tsu(EMWEL-

Delay time from EM_WE low to EM_WAIT

EMWAIT)

asserted(2)

(1)

E = PLLC1 SYSCLK2 period in ns. SYSCLK2 is the EMIF peripheral clock. SYSCLK2 is one-fourth the PLLC output clock. For example,

when PLLC output clock = 432 MHz, E = 9.259 ns. See Section 3.5 for more information.

(2)

Setup before end of STROBE phase (if no extended wait states are inserted) by which EM_WAIT must be asserted to add extended

wait states. Figure 5-16 and Figure 5-17 describe EMIF transactions that include extended wait states inserted during the STROBE

phase. However, cycles inserted as part of this extended wait period should not be counted; the 4E requirement is to the start of where

the HOLD phase would begin if there were no extended wait cycles.

Table 5-14. Switching Characteristics Over Recommended Operating Conditions for Asynchronous

Memory Cycles for AEMIF Module(1)(2)(3) (see Figure 5-14 and Figure 5-15)

DM355

UNI

NO.

PARAMETER

MIN

Nom

MAX

READS and WRITES

td(TURNAROUND)

Turn around time

(TA)*E

READS

EMIF read cycle time (EW = 0)

(RS+RST+RH)*E

tc(EMRCYCLE)

(RS+RST+RH+(EWC*

EMIF read cycle time (EW = 1)

16))*E

Output setup time, EM_CE[1:0] low to

(RS)*E

EM_OE low (SS = 0)

tsu(EMCEL-EMOEL)

Output setup time, EM_CE[1:0] low to

EM_OE low (SS = 1)

Output hold time, EM_OE high to

(RH)*E

EM_CE[1:0] high (SS = 0)

th(EMOEH-EMCEH)

Output hold time, EM_OE high to

EM_CE[1:0] high (SS = 1)

(1)

TA = Turn around, RS = Read setup, RST = Read strobe, RH = Read hold, WS = Write setup, WST = Write strobe, WH = Write hold,

MEWC = Maximum external wait cycles. These parameters are programmed via the Asynchronous Bank and Asynchronous Wait Cycle

Configuration Registers. These support the following range of values: TA[4-1], RS[16-1], RST[64-1], RH[8-1], WS[16-1], WST[64-1],

WH[8-1], and MEW[1-256]. See the TMS320DM355 DMSoC Asynchronous External Memory Interface (EMIF) User's Guide (SPRUED1)

for more information.

(2)

E = PLLC1 SYSCLK2 period in ns. SYSCLK2 is the EMIF peripheral clock. SYSCLK2 is one-fourth the PLLC output clock. For example,

when PLLC output clock = 432 MHz, E = 9.259 ns. See Section 3.5 for more information

(3)

EWC = external wait cycles determined by EM_WAIT input signal. EWC supports the following range of values EWC[256-1]. Note that

the maximum wait time before timeout is specified by bit field MEWC in the Asynchronous Wait Cycle Configuration Register. See the

TMS320DM355 DMSoC Asynchronous External Memory Interface (EMIF) User's Guide (SPRUED1) for more information.

Peripheral Information and Electrical Specifications

106

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