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RA2L2 Datasheet(PDF) 89 Page - Renesas Technology Corp

Part # RA2L2
Description  Renesas Microcontrollers
PDF  108 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RA2L2 Datasheet(HTML) 89 Page - Renesas Technology Corp

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Table 2.58
Code flash characteristics (2) (2 of 2)
High-speed operating mode
Conditions: VCC = AVCC0 = 1.8 to 5.5 V
Parameter
Symbol
ICLK = 1 MHz
ICLK = 48 MHz
Unit
Min
Typ
Max
Min
Typ
Max
Blank check time
4-byte
tBC4
—
—
46.5
—
—
8.3
µs
2-KB
tBC2K
—
—
3681
—
—
240
µs
Erase suspended time
tSED
—
—
22.3
—
—
10.5
µs
Access window information program
Start-up area selection and security
setting time
tAWSSAS —
21.2
570
—
11.4
423
ms
OCD/serial programmer ID setting
time*1
tOSIS
—
84.7
2280
—
45.3
1690
ms
Flash memory mode transition wait
time 1
tDIS
2
—
—
2
—
—
µs
Flash memory mode transition wait
time 2
tMS
15
—
—
15
—
—
µs
Note:
Does not include the time until each operation of the flash memory is started after instructions are executed by software.
Note:
The lower-limit frequency of ICLK is 1 MHz during programming or erasing the flash memory. When using ICLK at below 4 MHz, the
frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.
Note:
The frequency accuracy of ICLK must be ± 1.0% during programming or erasing the flash memory. Confirm the frequency accuracy
of the clock source.
Note 1. Total time of four commands.
Table 2.59
Code flash characteristics (3)
Middle-speed operating mode
Conditions: VCC = AVCC0 = 1.8 to 5.5 V
Parameter
Symbol
ICLK = 1 MHz
ICLK = 24 MHz*2
Unit
Min
Typ
Max
Min
Typ
Max
Programming time
4-byte
tP4
—
86
732
—
39
356
µs
Erasure time
2-KB
tE2K
—
12.5
355
—
6.2
227
ms
Blank check time
4-byte
tBC4
—
—
46.5
—
—
11.3
µs
2-KB
tBC2K
—
—
3681
—
—
534
µs
Erase suspended time
tSED
—
—
22.3
—
—
11.7
µs
Access window information program
Start-up area selection and security
setting time
tAWSSAS —
21.2
570
—
12.2
435
ms
OCD/serial programmer ID setting
time*1
tOSIS
—
84.7
2280
—
48.7
1740
ms
Flash memory mode transition wait
time 1
tDIS
2
—
—
2
—
—
µs
Flash memory mode transition wait
time 2
tMS
15
—
—
15
—
—
µs
Note:
Does not include the time until each operation of the flash memory is started after instructions are executed by software.
Note:
The lower-limit frequency of ICLK is 1 MHz during programming or erasing the flash memory. When using ICLK at below 4 MHz, the
frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.
Note:
The frequency accuracy of ICLK must be ± 1.0% during programming or erasing the flash memory. Confirm the frequency accuracy
of the clock source.
Note 1. Total time of four commands.
Note 2. When 1.8 V ≤ VCC = AVCC0 ≤ 5.5 V
RA2L2 Datasheet
2. Electrical Characteristics
R01DS0445EJ0120 Rev.1.20
Jun 9, 2026
Page 89 of 108



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