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HD64F36022 Datasheet(PDF) 290 Page - Renesas Technology Corp |
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HD64F36022 Datasheet(HTML) 290 Page - Renesas Technology Corp |
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290 / 384 page ![]() Section 18 Electrical Characteristics Rev. 4.00 Sep. 23, 2005 Page 264 of 354 REJ09B0025-0400 18.2.6 Flash Memory Characteristics Table 18.7 Flash Memory Characteristics V CC = 3.0 V to 5.5 V, VSS = 0.0 V, Ta = –20°C to +75°C, unless otherwise specified. Test Values Item Symbol Condition Min Typ Max Unit Programming time (per 128 bytes)* 1*2*4 t P — 7 200 ms Erase time (per block) * 1*3*6 t E — 100 1200 ms Reprogramming count N WEC 1000 10000 — Times Programming Wait time after SWE bit setting* 1 x 1 — — µs Wait time after PSU bit setting* 1 y 50 — — µs Wait time after P bit setting z1 1 ≤ n ≤ 6 28 30 32 µs * 1*4 z2 7 ≤ n ≤ 1000 198 200 202 µs z3 Additional- programming 8 10 12 µs Wait time after P bit clear* 1 α 5 — — µs Wait time after PSU bit clear* 1 β 5 — — µs Wait time after PV bit setting* 1 γ 4 — — µs Wait time after dummy write* 1 ε 2 — — µs Wait time after PV bit clear* 1 η 2 — — µs Wait time after SWE bit clear* 1 θ 100 — — µs Maximum programming count* 1*4*5 N — — 1000 Times |
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