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32186 Datasheet(PDF) 935 Page - Renesas Technology Corp

Part # 32186
Description  MCU
PDF  1032 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

32186 Datasheet(HTML) 935 Page - Renesas Technology Corp

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23
ELECTRICAL CHARACTERISTICS
23-19
32185/32186 Group Hardware Manual
Rev.1.10 REJ09B0235-0110 May 15, 07
23.7 Flash Memory Related Characteristics
23.7 Flash Memory Related Characteristics
Symbol
Parameter
Test Condition
Rated Value
Unit
MIN
TYP
MAX
Topr
Ambient Temperature
-40
125
°C
for Flash rewriting
cycle
Number of times for
Standard goods
100
times
Flash rewriting(Note 1)
(Note 2)
Note 1: Writing time for every 4 half word.
23.8 External Capacitance for Power Supply
Note 1: Definition of the number of times for Flash rewriting
The number of times for Flash rewriting is the number of times for erase for each blocks. When the number of times is
100, it can be erase 100 times for each blocks. However, for ine erase it can not be writed in the same adress two or
more times(forbiddance of overwriting).
Note 2: It is the minimum number of times which guarantees all the characteristics after program/erase (guarantee is the
range from "1" to "minimum" value.
(1)Standard goods (The number of times for Flash rewriting is 100)
Symbol
Parameter
Test Condition
Rated Value
Unit
MIN
TYP
MAX
tPRG
Program time (Note 1)
4 KByte block
till 100 times
200
1600
µs
Other than 4 KByte block till 100 times
100
800
µs
4 KByte block
till 100 times
0.3
6
s
8 KByte block
till 100 times
0.3
6
s
TBERS Block erase time
16 KByte block
till 100 times
0.5
6
s
32 KByte block
till 100 times
0.7
6
s
64 KByte block
till 100 times
1.2
6
s
Symbol
Parameter
Rated Value
Unit
MIN
TYP
MAX
EXCVCC
External capacity connestion pins
1
10
µF
EXCVDD
External capacity connestion pins
1
10
µF
for inside internal RAM power supply



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