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LPC3131 Datasheet(PDF) 52 Page - NXP Semiconductors |
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LPC3131 Datasheet(HTML) 52 Page - NXP Semiconductors |
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52 / 68 page ![]() LPC3130_3131_1 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 1 — 9 February 2009 52 of 68 NXP Semiconductors LPC3130/3131 Low-cost, low-power ARM926EJ-S microcontrollers 9.4 NAND flash memory controller [1] THCLK = 1/NANDFLASH_NAND_CLK, see LPC3130/3131 user manual. [2] See registers NandTiming1 and NandTiming2 in the LPC3130/3131 user manual. Table 19. Dynamic characteristics of the NAND flash memory controller Tamb = −40 °C to +85 °C, unless otherwise specified. Symbol Parameter Typical Unit tREH RE HIGH hold time [1][2] THCLK x (TREH+1) ns tRP RE pulse width [1][2] THCLK x (TRP + 1) ns tWH WE HIGH hold time [1][2] THCLK x (TWH + 1) ns tWP WE pulse width [1][2] THCLK x (TWP + 1) ns tCLS CLE set-up time [1][2] THCLK x (TCLS + 1) ns tCLH CLE hold time [1][2] THCLK x (TCLH + 1) ns tALS ALE set-up time [1][2] THCLK x (TALS + 1) ns tALH ALE hold time [1][2] THCLK x (TALH + 1) ns tCS CE set-up time [1][2] THCLK x (TCS + 1) ns tCH CE hold time [1][2] THCLK x (TCH + 1) ns Fig 19. NAND flash controller write and read timing EBI_NWE EBI_A_1_CLE EBI_A_0_ALE tWP tCS tCH tCLS tCLH mNAND_NCS tWH 002aae353 tALS tALH tRP tREH EBI_DQM_0_NOE |
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