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LPC3131 Datasheet(PDF) 16 Page - NXP Semiconductors |
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LPC3131 Datasheet(HTML) 16 Page - NXP Semiconductors |
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16 / 68 page ![]() LPC3130_3131_1 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 1 — 9 February 2009 16 of 68 NXP Semiconductors LPC3130/3131 Low-cost, low-power ARM926EJ-S microcontrollers • Software control mode where the ARM is directly master of the flash device. • Support for 8 bit and 16 bit flash devices. • Support for any page size from 0.5 kB upwards. • Programmable NAND flash timing parameters. • Support for up to 4 NAND devices. • Error Correction Module (ECC) for MLC NAND flash support: – Reed-Solomon error correction encoding and decoding. – Uses Reed-Solomon code words with 9-bit symbols over GF(29), a total codeword length of 469 symbols, including 10 parity symbols, giving a minimum Hamming distance of 11. – Up to 8 symbol errors can be corrected per codeword. – Error correction can be turned on and off to match the demands of the application. – Parity generator for error correction encoding. – Wear leveling information can be integrated into protected data. – Interrupts generated after completion of error correction task with 3 interrupt registers. – Error correction statistics distributed to ARM using interrupt scheme. – Interface is compatible with the ARM External Bus Interface (EBI). 6.5 Multi-Port Memory Controller (MPMC) The multi-port memory controller supports the interface to different memory types, for example: • SDRAM • Low-power SDRAM • Static memory interface This module has the following features: • Dynamic memory interface support including SDRAM, JEDEC low-power SDRAM. • Address line supporting up to 128 MB of dynamic memory. • The MPMC has two AHB interfaces: a. an interface for accessing external memory. b. a separate control interface to program the MPMC. This enables the MPMC registers to be situated in memory with other system peripheral registers. • Low transaction latency. • Read and write buffers to reduce latency and to improve performance, particularly for un-cached processors. • Static memory features include: – asynchronous page mode read – programmable wait states – bus turnaround delay – output enable and write enable delays |
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