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LPC18S50 Datasheet(PDF) 86 Page - NXP Semiconductors |
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LPC18S50 Datasheet(HTML) 86 Page - NXP Semiconductors |
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86 / 151 page ![]() LPC18S50_S30_S10 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved. Product data sheet Rev. 1 — 23 February 2015 86 of 151 NXP Semiconductors LPC18S50/S30/S10 32-bit ARM Cortex-M3 microcontroller 10. Static characteristics Table 10. Static characteristics Tamb = 40 C to +85 C unless otherwise specified. Symbol Parameter Conditions Min Typ[1] Max Unit Supply pins VDD(IO) input/output supply voltage 2.2 - 3.6 V VDD(REG)(3V3) regulator supply voltage (3.3 V) [2] 2.2 - 3.6 V VDDA(3V3) analog supply voltage (3.3 V) on pin VDDA 2.2 - 3.6 V on pins USB0_VDDA3V3_ DRIVER and USB0_VDDA3V3 3.0 3.3 3.6 V VBAT battery supply voltage [2] 2.2 - 3.6 V Vprog(pf) polyfuse programming voltage on pin VPP (for OTP) [3] 2.7 - 3.6 V Iprog(pf) polyfuse programming current on pin VPP; OTP programming time 1.6 ms --30 mA IDD(REG)(3V3) regulator supply current (3.3 V) Active mode; code while(1){} executed from RAM; all peripherals disabled; PLL1 enabled CCLK = 12 MHz [4] -6.6 -mA CCLK = 60 MHz [4] 25.3 - mA CCLK = 120 MHz [4] -48.4 -mA CCLK = 180 MHz [4] -72.0 -mA IDD(REG)(3V3) regulator supply current (3.3 V) after WFE/WFI instruction executed from RAM; all peripherals disabled sleep mode [4][5] -5.0 -mA deep-sleep mode [4] -30 - A power-down mode [4] -15 - A deep power-down mode [4][6] -0.03 - A deep power-down mode; VBAT floating [4] -2 - A IBAT battery supply current active mode; VBAT = 3.2 V; VDD(REG)(3V3) = 3.6 V. [7] -0 -nA IBAT battery supply current VDD(REG)(3V3) = 3.3 V; VBAT = 3.6 V deep-sleep mode [9] -2 - A power-down mode [9] -2 - A deep power-down mode [9] -2 - A |
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