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MFC2000 Datasheet(PDF) 84 Page - List of Unclassifed Manufacturers

Part # MFC2000
Description  Multifunctional Peripheral Controller 2000
PDF  426 Pages
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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MFC2000 Datasheet(HTML) 84 Page - List of Unclassifed Manufacturers

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MFC2000 Multifunctional Peripheral Controller 2000
Hardware Description
4-54
Conexant
100723A
4.4.3
Timing
SIUCLK
(internal)
MIRQn
PRTIRQn(IRQ2)
or
GPIO[8](IRQ11)
or
GPIO[9](IRQ13)
or
IRQ16(SYSIRQ)
Figure 4-14. External Interrupt Request Timing
Note:
The MFP2000 chip resynchronizes MIRQn,
PRTIRQn, GPIO[8], GPIO[9], and
IRQ16 signals internally. There are no setup time and hold time requirements for MIRQn,
PRTIRQn,
GPIO[8], GPIO[9], MIRQn, and IRQ16 signals with respect to SYSCLK. The four
external interrupts PRTIRQn, GPIO[8], GPIO[9], and IRQ16 can also be programmed as edge
triggered interrupts. In this case, the interrupt signals are implemented as clock into flip-flops
with D-input either tied to high or low; again there is no setup and hold time requirements either.
4.5
DRAM Controller (Including Battery DRAM)
4.5.1
Functional Description
The DRAM Controller interfaces to external memory devices and to the internal ARM7 SIU block. The DRAM
memory space can be divided into two banks of memory which can be independently configured. The system
clock rate that is supported can be up to 40MHz and can support the DRAM characteristics that are listed in the
following tables
Addressing Size:
512K, 1M, 4M, 16M
Organization:
4 bits, 8 bits, or 16 bits
Access Speed:
50, 60, 70, 80 ns
The maximum memory size that is supported for two memory banks is 32M. The DRAM Chip sizes that are
supported go up to 16M, but are limited to the row/column configurations that can be accommodated from the
address multiplexing table (Table 4-12) and the DRAM row/column configuration Table 4-14).
The number of DRAM access and refresh cycle wait states can be programmed from the DRAMCtrl register.
Specifically, options to control the RAS precharge width, RAS low time, and CAS low time are provided. The drive
capability of the DRAM control signals can support a maximum of 50pF of loading capacitance.
Several types of external DRAM configurations can be supported: non-interleaved (8-bit or 16-bit data bus) and 2-
way interleaved (16-bit data bus) (See Table 4-11). Memory bank 0 can be configured independently from
memory bank 1.



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