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MFC2000 Datasheet(PDF) 84 Page - List of Unclassifed Manufacturers |
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MFC2000 Datasheet(HTML) 84 Page - List of Unclassifed Manufacturers |
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84 / 426 page ![]() MFC2000 Multifunctional Peripheral Controller 2000 Hardware Description 4-54 Conexant 100723A 4.4.3 Timing SIUCLK (internal) MIRQn PRTIRQn(IRQ2) or GPIO[8](IRQ11) or GPIO[9](IRQ13) or IRQ16(SYSIRQ) Figure 4-14. External Interrupt Request Timing Note: The MFP2000 chip resynchronizes MIRQn, PRTIRQn, GPIO[8], GPIO[9], and IRQ16 signals internally. There are no setup time and hold time requirements for MIRQn, PRTIRQn, GPIO[8], GPIO[9], MIRQn, and IRQ16 signals with respect to SYSCLK. The four external interrupts PRTIRQn, GPIO[8], GPIO[9], and IRQ16 can also be programmed as edge triggered interrupts. In this case, the interrupt signals are implemented as clock into flip-flops with D-input either tied to high or low; again there is no setup and hold time requirements either. 4.5 DRAM Controller (Including Battery DRAM) 4.5.1 Functional Description The DRAM Controller interfaces to external memory devices and to the internal ARM7 SIU block. The DRAM memory space can be divided into two banks of memory which can be independently configured. The system clock rate that is supported can be up to 40MHz and can support the DRAM characteristics that are listed in the following tables Addressing Size: 512K, 1M, 4M, 16M Organization: 4 bits, 8 bits, or 16 bits Access Speed: 50, 60, 70, 80 ns The maximum memory size that is supported for two memory banks is 32M. The DRAM Chip sizes that are supported go up to 16M, but are limited to the row/column configurations that can be accommodated from the address multiplexing table (Table 4-12) and the DRAM row/column configuration Table 4-14). The number of DRAM access and refresh cycle wait states can be programmed from the DRAMCtrl register. Specifically, options to control the RAS precharge width, RAS low time, and CAS low time are provided. The drive capability of the DRAM control signals can support a maximum of 50pF of loading capacitance. Several types of external DRAM configurations can be supported: non-interleaved (8-bit or 16-bit data bus) and 2- way interleaved (16-bit data bus) (See Table 4-11). Memory bank 0 can be configured independently from memory bank 1. |
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