R34DS0034EU0101 Rev.1.01

Page 9

Mar 13, 2024

ISL73006SLH Datasheet

Thermal

Shutdown

Hysteresis[4]

ThermSDHYS

--

-

-

20

°C

Compensation

Internal Error

Amplifier Output

Transconductance

[4]

EAtranscon1

Internal Compensation Configuration

RCOMP = 1MΩ, CCOMP = 50pF

+25

-

0.022

-

mA/V

Internal Error

Amplifier Zero [4]

EAfz

fz = gm_integrater/(2pi(R2/R1)Ccomp)

+25

-

4.1

-

kHz

Internal Error

Amplifier

Gain-Bandwidth

Product[4]

EAGBP1

-+25

-

33

-

MHz

Internal Error

Amplifier DC

Gain[4]

EAAV1

1Hz

+25

55.3

82

-

dB

+125

58.5

82

-

External Error

Amplifier

Transconductance

EAtranscon2

PVIN = 5V, delta COMP current/delta

FB Voltage (10mV)

-55

0.93

1.057

1.18

mA/V

+25

0.82

0.923

1.02

mA/V

+125

0.68

0.768

0.87

mA/V

External Error

Amplifier DC

Gain[4]

EAAV2

1Hz

+25

66

80

-

dB

External Error

Amplifier Gain-

Bandwidth

Product[4]

EAGBP2

-

+25

15

-

-

MHz

Oscillator/Slope Generator

Switching

Frequency

fSW

VSLOPE = 1.2V

-55 to +125

450

500

550

kHz

SLOPE Pin

Current Source

ISLOPE

-

-55 to +125

10.5

12

13.5

µA

Internal SLOPE

Ramp Rate

tSLOPE

(VCOMP at 80%DC - VCOMP at 20%DC)/

(tMIN_ONat80%DC - tMIN_ON at 20%DC)

-55 to +125

0.1

0.13

0.16

V/µs

Enable

Rising Enable

Voltage Threshold

ENVIH

Enable Rising to LX Switching

-55 to +125

1.18

1.21

1.3

V

Falling Enable

Voltage Threshold

ENVIL

Enable Falling to LX Stops Switching

-55 to +125

0.96

1

1.06

V

Enable Voltage LX

Hysteresis

ENVIHhys

Enable Rising to LX Switching - Enable

Falling to LX Stop switching

-55 to +125

20

200

410

mV

Standby Enable

Voltage

SB_ENVIH

Enable Rising to VCC Enabled

-55 to +125

0.45

0.76

1

V

Unless otherwise noted, PVIN = 3V and 18V; PGND = SGND = 0V; LX = Open Circuit; PGOOD is pulled up to PVIN with a 10k

resistor; IOUT = 0A; TJ = TA, rDS(ON) is pulse tested. Boldface limits apply across the operating temperature range, -55°C to

+125°C by production testing; over a total ionizing dose of 75krad(Si) at +25°C with exposure at a low dose rate of

<10mrad(Si)/s. (Cont.)

Parameter

Symbol

Test Conditions

Temp. (°C)

Min

Typ[1]

Max

Unit