R34DS0034EU0101 Rev.1.01

Page 26

Mar 13, 2024

ISL73006SLH Datasheet

The heat of the IC is mainly dissipated through the thermal pad. Maximizing the copper area connected to the

thermal pad is preferable. In addition, a solid buried ground plane is helpful for better EMI performance with a

cutout of the top-level LX shape to reduce coupling. Renesas recommends referencing TB499 for guidance about

via ground connections within the pad for the best thermal relief.

7.

Die Characteristics

Figure 42. Layout Component Placement Suggestion

Table 1. Die and Assembly Related Information

Die Information

Dimensions

2413µm x 3302µm (95 mils x 130 mils)

Thickness: 305µm ±25µm (12 mils ±1 mil)

Interface Materials

Glassivation

Type: 12kÅ Silicon Nitride on 3kÅ Oxide

Top Metallization

Type: Al , 0.5%Cu, 0.87% Si

Backside Finish

Silicon

Process

0.25µm BiCMOS

Assembly Information

Substrate Potential

Floating

Additional Information

Worst Case Current Density

1.6x105A/cm2

Transistor Count

19366

Weight of Packaged Device

0.42 grams

Lid Characteristics

Finish: Gold

Potential: Tied to package pin 8

Bottom Metal Characteristics

Finish: Gold

Potential: Tied to package pin 8

COUT

LOUT

PGND

LX

VOUT

CIN

PVIN

SGND

COMP RC

THERMAL PAD

CONNECTED TO

COMMON GROUND

Package Outline

FB

Rf2

PG