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R261 Datasheet(PDF) 2 Page - ON Semiconductor

Part # R261
Description  Advanced Noise Reduction Solution for Voice Capture Devices
PDF  28 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

R261 Datasheet(HTML) 2 Page - ON Semiconductor

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BelaSigna R261
http://onsemi.com
2
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter
Min
Max
Unit
Power Supply (Applies on VBAT, VBATRCVR and VDDO for “Max” and for
VSSA, VSSRCVR and VSSD for “Min”) (Note 1)
−0.3
4.0
V
Digital input pin voltage
VSSA − 0.3 V
VDDO + 0.3 V
V
Operating temperature range
−40
85
°C
Storage temperature range
−40
85
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Time limit at maximum voltage must be less than 100 ms.
NOTE: Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
This device series incorporates ESD protection and is tested by the following methods:
− ESD Human Body Model (HBM) tested per AEC−Q100−002 (EIA/JESD22−A114)
− ESD Machine Model (MM) tested per AEC−Q100−003 (EIA/JESD22−A115)
− ESD Charge Discharge Model (CDM) tested per ESD−STM 5−3−1−1999.
This device series incorporates latch−up immunity and is tested in accordance with JESD78:
Electrical Performance Specifications
Table 2. ELECTRICAL CHARACTERISTICS (The typical parameters in Table 2 were measured at 20°C with a clean
3.3 V supply voltage (unless noted differently). Parameters marked as screened are tested on each chip. Other parameters are qualified
for all process corners but not tested on every part.)
Parameter
Symbol
Test Conditions / Notes
Min
Typ
Max
Unit
Screened
OVERALL
Supply voltage
VBAT
1.8
3.3
3.63
V
Maximum risetime
VBAT_RISE
Between 0 V and 1.8 V
10
ms
Current consumption
IBAT_ACTIVE Active mode, VBAT = 3.3 V
15
mA
IBAT_BPASS Bypass mode, VBAT = 3.3 V
2.5
3
mA
IBAT3_LOUT Lineout mode, VBAT = 3.3 V
1.2
2
mA
IBAT4_SLEEP Sleep mode, VBAT = 3.3 V
40
mA
VREG (1 mF External Capacitor)
Output voltage
VREG
Without load, or with micro-
phone attached (0 to 200 mA)
0.95
1
1.05
V
PSRR
VREG_PSRR @ 1 kHz
54
dB
Load regulation
VREG_LdReg @ 2 mA
6
mV/mA
Load current
VREG_ILoad
2
mA
Line regulation
VREG_LnReg
0.065
mV/V
VDDA (1 mF External Capacitor on VDDA + 100 nF External Capacitor on CAP0/CAP1)
Output voltage
VDDA
Unloaded with VREG = 1 V
1.8
2
2.1
V
PSRR
VDDA_PSRR @ 1 kHz
45
dB
Load regulation
VDDA_LdReg @ 1 mA, MCLK = 1.28 MHz
110
140
mV/mA
@ 1 mA, MCLK = 2.56 MHz
70
100
mV/mA
Load current
VDDA_ILoad
1
mA
Line regulation
VDDA_LnReg
0.126
mV/V
VDDD (1 mF External Capacitor)
Output voltage
VDDD
1.62
1.8
1.98
V
VMIC
Output voltage
VMIC_VREG VMIC = VREG
0.98
1.0
1.01
V
VMIC_VDDA VMIC = VDDA
1.95
1.98
2.01
V



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