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R261 Datasheet(PDF) 2 Page - ON Semiconductor |
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R261 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 28 page ![]() BelaSigna R261 http://onsemi.com 2 Table 1. ABSOLUTE MAXIMUM RATINGS Parameter Min Max Unit Power Supply (Applies on VBAT, VBATRCVR and VDDO for “Max” and for VSSA, VSSRCVR and VSSD for “Min”) (Note 1) −0.3 4.0 V Digital input pin voltage VSSA − 0.3 V VDDO + 0.3 V V Operating temperature range −40 85 °C Storage temperature range −40 85 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Time limit at maximum voltage must be less than 100 ms. NOTE: Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. This device series incorporates ESD protection and is tested by the following methods: − ESD Human Body Model (HBM) tested per AEC−Q100−002 (EIA/JESD22−A114) − ESD Machine Model (MM) tested per AEC−Q100−003 (EIA/JESD22−A115) − ESD Charge Discharge Model (CDM) tested per ESD−STM 5−3−1−1999. This device series incorporates latch−up immunity and is tested in accordance with JESD78: Electrical Performance Specifications Table 2. ELECTRICAL CHARACTERISTICS (The typical parameters in Table 2 were measured at 20°C with a clean 3.3 V supply voltage (unless noted differently). Parameters marked as screened are tested on each chip. Other parameters are qualified for all process corners but not tested on every part.) Parameter Symbol Test Conditions / Notes Min Typ Max Unit Screened OVERALL Supply voltage VBAT 1.8 3.3 3.63 V Maximum risetime VBAT_RISE Between 0 V and 1.8 V 10 ms Current consumption IBAT_ACTIVE Active mode, VBAT = 3.3 V 15 mA IBAT_BPASS Bypass mode, VBAT = 3.3 V 2.5 3 mA IBAT3_LOUT Lineout mode, VBAT = 3.3 V 1.2 2 mA IBAT4_SLEEP Sleep mode, VBAT = 3.3 V 40 mA VREG (1 mF External Capacitor) Output voltage VREG Without load, or with micro- phone attached (0 to 200 mA) 0.95 1 1.05 V PSRR VREG_PSRR @ 1 kHz 54 dB Load regulation VREG_LdReg @ 2 mA 6 mV/mA Load current VREG_ILoad 2 mA Line regulation VREG_LnReg 0.065 mV/V VDDA (1 mF External Capacitor on VDDA + 100 nF External Capacitor on CAP0/CAP1) Output voltage VDDA Unloaded with VREG = 1 V 1.8 2 2.1 V PSRR VDDA_PSRR @ 1 kHz 45 dB Load regulation VDDA_LdReg @ 1 mA, MCLK = 1.28 MHz 110 140 mV/mA @ 1 mA, MCLK = 2.56 MHz 70 100 mV/mA Load current VDDA_ILoad 1 mA Line regulation VDDA_LnReg 0.126 mV/V VDDD (1 mF External Capacitor) Output voltage VDDD 1.62 1.8 1.98 V VMIC Output voltage VMIC_VREG VMIC = VREG 0.98 1.0 1.01 V VMIC_VDDA VMIC = VDDA 1.95 1.98 2.01 V |
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