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LPC4370 Datasheet(PDF) 145 Page - NXP Semiconductors |
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LPC4370 Datasheet(HTML) 145 Page - NXP Semiconductors |
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145 / 150 page ![]() LPC4370 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 2 — 21 October 2013 145 of 150 NXP Semiconductors LPC4370 32-bit ARM Cortex-M4/M0 microcontroller 18. Revision history Table 44. Revision history Document ID Release date Data sheet status Change notice Supersedes LPC4370 v.2 20131021 Product data sheet - LPC4371_70 v.1.1 Modifications: • Part LPC4371 removed. • LCD added to part LPC4370. • Data sheet title changed to LPC4370. • VADC renamed to ADCHS throughout the document. Pin VADC_NEG renamed to ADCHS_NEG. • OTP memory size available for general-purpose use corrected. • SD/MMC timing parameters corrected. See Table 32. • Band gap characteristics removed. • Description of RESET pin updated in Table 3. • Table note 9 added in Table 10. • Minimum value of parameter VDC changed to 0.1 V. See Table 34 “12-bit ADC characteristics”. • Section 13.8 “12-bit ADCHS input selection” added. • Table 12 “Peripheral power consumption 12-bit ADCHS” added. • Data sheet status changed to Product data sheet. LPC4371_70 v.1.1 02112013 Objective data sheet - LPC4371_70 v.1 Modifications: • SSP0 boot pin functions corrected in Table 5 and Table 4. Pin P3_3 = SSP0_SCK, pin P3_6 = SSP0_SSEL, pin P3_7 = SSP0_MISO, pin P3_8 = SSP0_MOSI. • Section 13.7 “Minimizing interference between digital signals and 12-bit ADC signals” added. Pin description table updated with Table note 13. • TFBGA100 package added. • Table 7 “Limiting values” updated. • Parameter name IDD(ADC) changed to IDDA in Table 10. • Minimum value for parameter VIL changed to 0 V in Table 10. • Added note to limit data in Table 25 “Dynamic characteristics: Static asynchronous external memory interface” to single memory accesses. • Table 23 “Dynamic characteristics: SPIFI” added. • Power consumption in active mode corrected. See parameter IDD(REG)(3V3) in Table 10 and graphs Figure 8, Figure 9, and Figure 10. • Band gap characteristics added. See Table 13 and Figure 17. • Value of parameter IDD(REG)(3V3) in deep power-down increased to 0.03 μA in Table 10. • Value of parameter IDD(IO) in deep power-down increased to 0.05 μA in Table 10. • Figure 4 “AHB multilayer matrix master and slave connections” updated. |
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