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MPC5673K Datasheet(PDF) 85 Page - NXP Semiconductors |
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MPC5673K Datasheet(HTML) 85 Page - NXP Semiconductors |
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85 / 147 page  Electrical characteristics MPC5675K Microcontroller Data Sheet, Rev. 8.1 NXP Semiconductors 85 3.15 Flash memory electrical characteristics 3.15.1 Program/erase characteristics Table 25 shows the code flash memory program and erase characteristics. Table 26 shows the data flash memory program and erase characteristics. Table 25. Code flash memory program and erase electrical specifications No. Symbol Parameter Min Typ1 1 Typical program and erase times assume nominal supply values and operation at 25 °C. Initial max2 2 Initial Max program and erase times provide guidance for time-out limits used in the factory and apply for < 100 program/erase cycles, nominal supply values and operation at TJ = 25 °C. These values are verified at production test. Lifetime max3 3 Lifetime Max program and erase times apply across the voltage, temperature, and cycling range of product life. These values are characterized, but not tested. Unit 1TDWPROGRAM CC Doubleword (64 bits) program time4 4 Actual hardware programming times. This does not include software overhead. —18 50 500 µs 2T16KPPERASE CC 16 KB block pre-program and erase time — 200 500 5000 ms 3T32KPPERASE CC 32 KB block pre-program and erase time — 300 600 5000 ms 4T64KPPERASE CC 64 KB block pre-program and erase time — 400 900 5000 ms 5T128KPPERASE CC 128 KB block pre-program and erase time — 600 1300 7500 ms Table 26. Data flash memory program and erase electrical specifications No. Symbol Parameter Min Typ1 1 Typical program and erase times assume nominal supply values and operation at 25 °C. Initial max2 2 Initial Max program and erase times provide guidance for time-out limits used in the factory and apply for < 100 program/erase cycles, nominal supply values and operation at TJ = 25 °C. These values are verified at production test. Lifetime max3 3 Lifetime Max program and erase times apply across the voltage, temperature, and cycling range of product life. These values are characterized, but not tested. Unit 1TDWPROGRAM CC Singleword (32 bits) program time4 4 Actual hardware programming times. This does not include software overhead. —30 70 300 µs 2T16KPPERASE CC 16 KB block pre-program and erase time — 700 800 1500 ms Table 27. Flash memory module life No. Symbol Parameter Condition Value Unit Min Typ1 Max 1a P/E CC Number of program/erase cycles per block for over the operating temperature range (TJ) 16 KB blocks 100,000 — — cycles 1b 32 KB and 64 KB blocks 10,000 100,000 — cycles 1c 128 KB blocks 1,000 100,000 — cycles |
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