MPC5673K datasheet(94/147 Pages) NXP

94 / 147 page

MPC5675K Microcontroller Data Sheet, Rev. 8.1

Electrical characteristics

NXP Semiconductors

NOTE

0.7 V overshoot/undershoot can be allowed to occur repeatedly throughout the product

expected lifetime and will not cause any long term reliability issue.

3.19.1

DRAM pads electrical specifications (VDD_HV_DRAM = 3.3 V)

Table 44. Mode configuration for DRAM pads

Configuration1

1 Configuration is selected in the corresponding PCR registers of the SIUL.

Mode

000

1.8 V LPDDR Half Strength

001

1.8 V LPDDR Full Strength

010

1.8 V DDR2 Half Strength

011

2.5 V DDR

100

Not supported

101

Not supported

110

1.8 V DDR2 Full Strength

111

SDR

Table 45. DRAM pads DC electrical specifications (VDD_HV_DRAM = 3.3 V)

No.

Symbol

Parameter

Condition

Min

Max

Unit

1VDD_HV_DRAM

SR I/O supply voltage

—

3.0

3.6

VDD_HV_DRAM_VREF CC Input reference

voltage

—1.3

1.7

VDD_HV_DRAM_VTT CC Termination voltage

1 BGA473: Termination voltage can be supplied via package pins. BGA257 termination voltage internally tied as the

BGA257 does not provide DRAM interface. Disable ODT.

—VDD_HV_DRAM_VREF

– 0.05

VDD_HV_DRAM_VREF

+0.05

4VIH

CC Input high voltage

—

VDD_HV_DRAM_VREF +

0.20

—V

5VIL

CC Input low voltage

—

VDD_HV_DRAM_VREF

– 0.2

6VOH

CC Output high voltage

—

VDD_HV_DRAM_VTT

+0.8

—V

7VOL

CC Output low voltage

—

VDD_HV_DRAM_VTT

– 0.8

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