MPC5673K datasheet(98/147 Pages) NXP

98 / 147 page

MPC5675K Microcontroller Data Sheet, Rev. 8.1

Electrical characteristics

NXP Semiconductors

3.19.4

DRAM Pad Current Specifications

The power consumption of an I/O segment is dependent on the usage of the pins on a particular segment. The power

consumption is the sum of all output pin currents for a particular segment. The output pin current can be calculated based on

the voltage, frequency, and load on the pin.

DRAM CLK

1.4/1.4

2.4/2.4

0.4/0.6

2.7/2.7

000

1.6/1.6

2.7/2.7

0.7/0.9

1.8/3.4

1.4/1.4

2.4/2.4

1.1/1.1

3.0/2.8

001

1.7/1.7

2.7/2.7

0.3/0.4

1.0/1.1

1.4/1.4

2.4/2.4

0.9/1.1

3.0/2.8

010

1.6/1.6

2.7/2.7

0.3/0.4

0.9/1.0

1.4/1.4

2.5/2.5

1.5/1.2

3.2/2.6

110

1.7/1.7

2.7/2.7

0.4/0.4

1.1/1.2

→ H signifies low-to-high propagation delay and H → L signifies high-to-low propagation delay.

Table 53. DRAM pads AC electrical specifications (VDD_HV_DRAM (continued) = 1.8 V)

No.

Pad Name

Prop. Delay (ns)

→ H/H → L1

Rise/Fall Edge

(ns)

Drive Load

(pF)

Drive/Slew

Rate Select

Min

Max

Min

Max

MSB, LSB

MPC5673K Datasheet(PDF) 98 Page - NXP Semiconductors

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