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F24 Datasheet(PDF) 91 Page - Renesas Technology Corp

Part # F24
Description  RENESAS MCU
PDF  210 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

F24 Datasheet(HTML) 91 Page - Renesas Technology Corp

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RL78/F23, F24
3. ELECTRICAL SPECIFICATIONS (GRADE 3)
R01DS0446EJ0120 Rev.1.20
Page 91 of 207
Dec 31, 2025
(2)
Data flash memory processing time
(TA = -40 to +105
°C, 2.7 V ≤ EVDD0 = EVDD1 = VDD ≤ 5.5 V, VSS = EVSS0 = EVSS1 = 0 V)
Item
fCLK = 2 MHz
fCLK = 4 MHz
fCLK = 8 MHz
fCLK = 16 MHz
Unit
Conditions
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
Programming time
1 byte
60.0
550.0
49.0
450.0
44.0
410.0
42.0
390.0
µs
Erasure time
1 KB
11.5
340.0
8.4
275.0
7.1
250.0
6.3
235.0
ms
Blank checking time
1 byte
–
29.0
–
22.0
–
19.0
–
17.0
µs
1 KB
–
3.1
–
1.6
–
0.95
–
0.55
ms
Internal verify time
1 byte
–
350.0
–
175.0
–
90.0
–
45.0
µs
1 KB
–
76.0
–
38.0
–
19.0
–
9.5
ms
Item
fCLK = 20 MHz
fCLK = 32 MHz
fCLK = 40 MHz
Unit
Conditions
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
Programming time
1 byte
42.0
390.0
41.0
380.0
41.0
380.0
µs
Erasure time
1 KB
6.3
235.0
6.2
235.0
6.2
235.0
ms
Blank checking time
1 byte
–
17.0
–
16.0
–
16.0
µs
1 KB
–
0.55
–
0.5
–
0.5
ms
Internal verify time
1 byte
–
35.0
–
22.0
–
18.0
µs
1 KB
–
7.5
–
4.7
–
3.8
ms
Caution The listed values do not include the time until the operations of the flash memory start following
execution of an instruction by software.
3.11 Dedicated Flash Memory Programmer Communication (UART)
(TA = -40 to +105
°C, 2.7 V ≤ EVDD0 = EVDD1 = VDD ≤ 5.5 V, VSS = EVSS0 = EVSS1 = 0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Transfer rate
–
During serial programming
115.2 k
1 M
bps



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