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32186 Datasheet(PDF) 178 Page - Renesas Technology Corp

Part # 32186
Description  MCU
PDF  1032 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

32186 Datasheet(HTML) 178 Page - Renesas Technology Corp

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6
INTERNAL MEMORY
6-36
32185/32186 Group Hardware Manual
Rev.1.10 REJ09B0235-0110 May 15, 07
6.6 Programming Internal Flash Memory
END
Confirm the result of execution
of the programming process
(Note 1)
Last address?
YES
NO
START
Write the program data (2 bytes x 4)
to the internal flash memory address
to be programmed
Write the 4 Halfword Program command
(H'4343) to any address of
the internal flash memory
Internal flash memory is programmed
by 4 Halfword Program
Wait for 1 µs
(using a hardware or software timer)
FBUSY bit = 1
TIME OUT?
1600 µs (Note 2)
YES
NO
Forcibly terminated
YES
NO
To next 4 halfword
Note 1: Check Flash Status Register (FSTAT) ERASE bit (for the erase status) and WRERR bit (for the write status).
Note 2: It is a timeout period for 4-Kbyte block. The timeout period for other than 4 Kbytes is 800 µs.
Figure 6.6.9 4 Halfword Program
(2) 4 Halfword Program command
This command performs write (programming) to the flash memory by 2 bytes(halfword) x every 4 times of 4
halfwords (8 bytes unit). And the initial address when writing is 4 halfwords boundary (the lower address
B'000).
To program the flash memory, write the Program command (H’4343) to any address of the internal flash
memory and then the program data to the address to be programmed.
The protected flash memory blocks cannot be accessed for write by the 4 Halfword Program command.
4 halfword programming is automatically performed by the internal control circuit, and whether the 4
Halfword Program command has finished can be known by checking the Flash Status Register (FSTAT)
FBUSY (Flash busy) bit. While the FBUSY bit = "0," the next programming cannot be performed.



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