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32186 Datasheet(PDF) 178 Page - Renesas Technology Corp |
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32186 Datasheet(HTML) 178 Page - Renesas Technology Corp |
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178 / 1032 page ![]() 6 INTERNAL MEMORY 6-36 32185/32186 Group Hardware Manual Rev.1.10 REJ09B0235-0110 May 15, 07 6.6 Programming Internal Flash Memory END Confirm the result of execution of the programming process (Note 1) Last address? YES NO START Write the program data (2 bytes x 4) to the internal flash memory address to be programmed Write the 4 Halfword Program command (H'4343) to any address of the internal flash memory Internal flash memory is programmed by 4 Halfword Program Wait for 1 µs (using a hardware or software timer) FBUSY bit = 1 TIME OUT? 1600 µs (Note 2) YES NO Forcibly terminated YES NO To next 4 halfword Note 1: Check Flash Status Register (FSTAT) ERASE bit (for the erase status) and WRERR bit (for the write status). Note 2: It is a timeout period for 4-Kbyte block. The timeout period for other than 4 Kbytes is 800 µs. Figure 6.6.9 4 Halfword Program (2) 4 Halfword Program command This command performs write (programming) to the flash memory by 2 bytes(halfword) x every 4 times of 4 halfwords (8 bytes unit). And the initial address when writing is 4 halfwords boundary (the lower address B'000). To program the flash memory, write the Program command (H’4343) to any address of the internal flash memory and then the program data to the address to be programmed. The protected flash memory blocks cannot be accessed for write by the 4 Halfword Program command. 4 halfword programming is automatically performed by the internal control circuit, and whether the 4 Halfword Program command has finished can be known by checking the Flash Status Register (FSTAT) FBUSY (Flash busy) bit. While the FBUSY bit = "0," the next programming cannot be performed. |
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