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HMS81032TL Datasheet(PDF) 15 Page - Hynix Semiconductor

Part # HMS81032TL
Description  HYNIX SEMICONDUCTOR 8-BIT SINGLE-CHIP MICROCONTROLLERS
PDF  77 Pages
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

HMS81032TL Datasheet(HTML) 15 Page - Hynix Semiconductor

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HMS81004E/08E/16E/24E/32E
12
JUNE 2001 Ver 1.00
7. ELECTRICAL CHARACTERISTICS
7.1 Absolute Maximum Ratings
Supply voltage ........................................... -0.3 to +5.0 V
Input Voltage .....................................-0.3 to VDD+0.3 V
Output Voltage ...................................-0.3 to VDD+0.3 V
Operating Temperature........................................ 0~70
°C
Storage Temperature ...................................... -65~150
°C
Power Dissipation................................................700 mA
Note: Stresses above those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the de-
vice. This is a stress rating only and functional operation of
the device at any other conditions above those indicated in
the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for ex-
tended periods may affect device reliability.
7.2 Recommended Operating Conditions
7.3 DC Electrical Characteristics
(TA=-0~70°C, VDD=2.0~3.6V, GND=0V)
Parameter
Symbol
Condition
Specifications
Unit
Min.
Max.
Supply Voltage
VDD
fXIN=4MHz
2.0
3.6
V
Operating Frequency
fXIN
VDD=2.0~3.6V
1.0
4.0
MHz
Operating Temperature
TOPR
-0
+70
°C
Parameter
Symbol
Condition
Specifications
Unit
Min.
Typ.
Max.
High level
input Voltage
VIH1
R11,R12,R14,RESET
0.8 VDD
-
VDD
V
VIH2
R0,R1(except R11,R12,R14), R2
0.7 VDD
-
VDD
V
Low level
input Voltage
VIL1
R11,R12,R14,RESET
0-
0.2 VDD
V
VIL2
R0,R1(except R11,R12,R14), R2
0
-
0.3 VDD
V
Hign level input
Leakage Current
IIH
R0,R1,R2,RESET ,VIH= VDD
--
1
µA
Low level input
Leakage Current
IIL
R0,R1,R2,RESET (without pull-up),VIL= 0
--
-1
µA
High level
output Voltage
VOH1
R0, IOH=-0.5mA
VDD-0.4
-
-
V
VOH2
R1[6:0], R2, IOH=-1.0mA
VDD-0.4
-
-
V
VOH3
XIN, XOUT,IOH=-200µA
VDD-0.9
-
-
V
Low level
output Voltage
VOL1
R0, IOL=1mA
--
0.4
V
VOL2
R1, R2, IOL=5mA
--
0.8
V
VOL3
XIN, XOUT,IOL=200µA
--
0.8
V
Hign level output
Leakage Current
IOHL
R0,R1,R2, VOH= VDD
--
1
µA
Low level output
Leakage Current
IOLL
R0,R1,R2, VOL= 0
--
-1
µA



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