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LPC18S50 Datasheet(PDF) 122 Page - NXP Semiconductors |
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LPC18S50 Datasheet(HTML) 122 Page - NXP Semiconductors |
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122 / 151 page ![]() LPC18S50_S30_S10 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved. Product data sheet Rev. 1 — 23 February 2015 122 of 151 NXP Semiconductors LPC18S50/S30/S10 32-bit ARM Cortex-M3 microcontroller [1] Characterized but not implemented as production test. [2] Total average power consumption. [3] The driver is active only 20 % of the time. 11.13 Ethernet Remark: The timing characteristics of the ENET_MDC and ENET_MDIO signals comply with the IEEE standard 802.3. Table 27. Static characteristics: USB0 PHY pins[1] Symbol Parameter Conditions Min Typ Max Unit High-speed mode Pcons power consumption [2] -68 - mW IDDA(3V3) analog supply current (3.3 V) on pin USB0_VDDA3V3_DRIVER; total supply current [3] -18 - mA during transmit - 31 - mA during receive - 14 - mA with driver tri-stated - 14 - mA IDDD digital supply current - 7 - mA Full-speed/low-speed mode Pcons power consumption [2] -15 - mW IDDA(3V3) analog supply current (3.3 V) on pin USB0_VDDA3V3_DRIVER; total supply current - 3.5 - mA during transmit - 5 - mA during receive - 3 - mA with driver tri-stated - 3 - mA IDDD digital supply current - 3 - mA Suspend mode IDDA(3V3) analog supply current (3.3 V) - 24 - A with driver tri-stated - 24 - A with OTG functionality enabled - 3 - mA IDDD digital supply current - 30 - A VBUS detector outputs Vth threshold voltage for VBUS valid 4.4 - - V for session end 0.2 - 0.8 V for A valid 0.8 - 2 V for B valid 2 - 4 V Vhys hysteresis voltage for session end - 150 10 mV A valid - 200 10 mV B valid - 200 10 mV |
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