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LPC18S50 Datasheet(PDF) 126 Page - NXP Semiconductors

Part # LPC18S50
Description  32-bit ARM Cortex-M3 flashless MCU with security features
PDF  151 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

LPC18S50 Datasheet(HTML) 126 Page - NXP Semiconductors

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LPC18S50_S30_S10
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 23 February 2015
126 of 151
NXP Semiconductors
LPC18S50/S30/S10
32-bit ARM Cortex-M3 microcontroller
12. ADC/DAC electrical characteristics
[1]
The ADC is monotonic, there are no missing codes.
[2]
The differential linearity error (ED) is the difference between the actual step width and the ideal step width. See Figure 39.
[3]
The integral non-linearity (EL(adj)) is the peak difference between the center of the steps of the actual and the ideal transfer curve after
appropriate adjustment of gain and offset errors. See Figure 39.
[4]
The offset error (EO) is the absolute difference between the straight line which fits the actual curve and the straight line which fits the
ideal curve. See Figure 39.
[5]
The gain error (EG) is the relative difference in percent between the straight line fitting the actual transfer curve after removing offset
error, and the straight line which fits the ideal transfer curve. See Figure 39.
[6]
The absolute error (ET) is the maximum difference between the center of the steps of the actual transfer curve of the non-calibrated
ADC and the ideal transfer curve. See Figure 39.
[7]
Tamb = 25 C.
[8]
Input resistance Ri depends on the sampling frequency fs: Ri = 2 k + 1 / (fs  Cia).
Table 32.
ADC characteristics
VDDA(3V3) over specified ranges; Tamb = 40 C to +85 C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VIA
analog input voltage
0
-
VDDA(3V3)
V
Cia
analog input capacitance
-
-
2
pF
ED
differential linearity error
2.7 V
 V
DDA(3V3)  3.6 V
[1][2] -
0.8
-
LSB
2.2 V
 V
DDA(3V3) < 2.7 V
-
1.0
-
LSB
EL(adj)
integral non-linearity
2.7 V
 V
DDA(3V3)  3.6 V
[3] -
0.8
-
LSB
2.2 V
 V
DDA(3V3) < 2.7 V
-
1.5
-
LSB
EO
offset error
2.7 V
 V
DDA(3V3)  3.6 V
[4] -
0.15
-
LSB
2.2 V
 V
DDA(3V3) < 2.7 V
-
0.15
-
LSB
EG
gain error
2.7 V
 V
DDA(3V3)  3.6 V
[5] -
0.3
-
%
2.2 V
 V
DDA(3V3) < 2.7 V
-
0.35
-
%
ET
absolute error
2.7 V
 V
DDA(3V3)  3.6 V
[6] -
3-
LSB
2.2 V
 V
DDA(3V3) < 2.7 V
-
4-
LSB
Rvsi
voltage source interface
resistance
see Figure 40
--
1/(7
 f
clk(ADC)
 C
ia)
k
Ri
input resistance
[7][8] --
1.2
M
fclk(ADC) ADC clock frequency
-
-
4.5
MHz
fs
sampling frequency
10-bit resolution; 11 clock
cycles
-
-
400
kSamples/s
2-bit resolution; 3 clock
cycles
1.5
MSamples/s



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