CS5530A datasheet(238/259 Pages) NSC

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238

Revision 1.1

Electrical Specifications (Continued)

5.4

DC CHARACTERISTICS

All DC parameters and current measurements in this section were measured under the operating conditions listed in Table

5-3 on page 237, unless otherwise noted.

Table 5-4. DC Characteristics

Symbol

Parameter

Min

Typ

Max

Units

Comments

VIL

Low Level Input Voltage (Note 1)

8mA

0.8

VDD =3.14V

CLK

0.8

IDE

0.8

PCI

-0.5

0.3VDD

VIH

High Level Input Voltage (Note 1)

8mA

2.0

VDD =3.14V

CLK

2.0

IDE

2.0

PCI

0.5VDD

VDD+0.5

VOL

Low Level Output Voltage (Note 1)

8mA

0.4

VDD =3.14V,IOL =8 mA

DOTCLK

0.4

VDD =3.14V,IOL =20mA

FP_CLK

0.4

VDD =3.14V,IOL =12mA

IDE

0.5

VDD =3.14V,IOL =12mA

PCI

0.1VDD

VDD =3.14V,IOL =1.5 mA

USB

0.3

RL =1.5 KΩ to VDD, VDD =3.46V

VOH

High Level Output Voltage (Note 1)

8mA

2.4

VDD =3.14V,IOH =-8 mA

DOTCLK

2.4

VDD =3.14V,IOH =-20 mA

FP_CLK

2.4

VDD =3.14V,IOH =-12 mA

IDE

2.4

VDD =3.14V,IOH =-400 µA

PCI

0.9VDD

VDD =3.14V,IOH =-0.5 mA

USB

2.8

VDD

VDD =3.14V,RL =15KΩ to VSS

ILEAK

Input Leakage Current Including Hi-Z Output Leakage (Note 1)

8 mA, CLK, DOTCLK,

FP_CLK, IDE, PCI

+/-10

µA

VDD =VDDIO =3.46V,

VPAD = 0 to 3.46V, Note 2

+/-200

VDD =VDDIO =3.46V,

VPAD =3.46to5.5V, Note 2

IPU

Weak Pull-Up Current (Note 1)

8 mA

-50

µA

VDDIO = 3.46V, Note 2

CS5530A Datasheet(PDF) 238 Page - National Semiconductor (TI)

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