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FXLS8964AF Datasheet(PDF) 12 Page - NXP Semiconductors |
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FXLS8964AF Datasheet(HTML) 12 Page - NXP Semiconductors |
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12 / 98 page  NXP Semiconductors FXLS8964AF 3-Axis Low-g Accelerometer FXLS8964AF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2020. All rights reserved. Objective data sheet Rev. 2 — 30 October 2020 12 / 98 Symbol Parameter Conditions Min Typ Max Unit ±4 g mode, XY axes — 512 — ±4 g mode, Z axis — 256 — ±8 g mode, XY axes — 256 — ±8 g mode, Z axis — 128 — ±16 g mode, XY axes — 128 — STOC Self-test output change ±16 g mode, Z axis — 64 — LSB ±4 g mode –1600 — +1600 ±8 g mode –800 — +800 STOF Self-test offset ±16 g mode –400 — +400 LSB BWMAX Maximum signal bandwidth ODR = 3200 Hz — 1600 — Hz ODRMAX Maximum ODR — — 3200 — Hz NSDHPM Noise spectral density, high performance mode ±2 g mode — 280 — µg/√Hz NSDLPM-1 Noise spectral density, low-power mode, high-ODR range[2] 200 Hz ≤ ODR ≤ 3200 Hz, ±2 g mode — 1120 to 280 — µg/√Hz NSDLPM-2 Noise spectral density, low-power mode, low-ODR range[2] 0.781 Hz ≤ ODR < 200 Hz, ±2 g mode — 16.8 to 1.1 — mg/√Hz [1] Determined with post board mount data using a standard lead-free reflow profile and NXP recommended landing pattern on a 4-layer FR4 PCB with 1.6 mm (62.5 mil) overall thickness. [2] In low-power mode, higher ODR settings result in a lower noise density figure. 9.5 Electrical characteristics Table 7. Electrical characteristics VDD = 1.8 V to 3.0 V, T = –40 °C to 105 °C, unless otherwise noted. Typical values represent mean or mean ±1 σ values, depending on the specific parameter. Symbol Parameter Conditions Min Typ Max Unit VDD Supply voltage — 1.71 3.0 3.6 V IDDHPM Average current draw in High Performance mode ODR independent, T = 25 °C — 150 200 µA |
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