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ATXP032 Datasheet(PDF) 101 Page - Dialog Semiconductor |
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ATXP032 Datasheet(HTML) 101 Page - Dialog Semiconductor |
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101 / 113 page ![]() 99 ATXP032 DS-ATXP032–114I–4-2020 2. Not 100% tested (value guaranteed by design and characterization). 3. Only applicable for standard serial mode. 4. The data strobe duty cycle distortion is in addition to whatever distortion there is on the incoming SCK clock. There is no clock recovery circuit that attempts to clean up the incoming clock signal before DS is created. 5. At default driver strength setting Note: 1. Typical values indicate performance for beginning of life for new devices at room temperature and nominal voltage (1.8V). 2. Maximum values indicate worst-case performance after 100,000 program/erase cycles unless specified otherwise. For program and erase times, values are also provided for new devices (less than 20.000 program/erase cycles), as this is the more likely use case for EcoXiP devices. 3. Not 100% tested (value guaranteed by design and characterization). 14.7 Program and Erase Characteristics — -40oC - +85 oC Note: All all parameters are specified for industrial temperature range (-40°C to 85°C). For extended range (KGD) parameters, contact Adesto. Symbol Parameter(3) 1.70V - 1.95V Units Min Typ(1) Max(2) tPP Page program time (256 Bytes) ≤ 20k cycles 5 8.2 ms Page program time (256 Bytes) ≤ 100k cycles 5 8.4 t BP Byte program time 22 µs t BLKE Block erase time for ≤ 20k cycles 4 Kbytes 160 250 ms 32 Kbytes 1250 1800 64 Kbytes 2500 3600 Block erase time for ≤ 100k cycles 4 Kbytes 160 320 32 Kbytes 1250 2400 64 Kbytes 2500 3900 t CHPE Chip erase time 160 sec t SUSP Suspend time Program 10 20 µs Erase 25 40 tRES Resume time Program 10 20 µs Erase 12 20 t OTPP OTP security register program time 5 6 ms tWRSR Write status register time - volatile registers 01h, 31h commands 100 ns 71h command 10 µs t WRSRNV Write status register time - non-volatile registers (71h command) 40 200 ms |
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