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ATXP032 Datasheet(PDF) 102 Page - Dialog Semiconductor |
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ATXP032 Datasheet(HTML) 102 Page - Dialog Semiconductor |
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102 / 113 page ![]() 100 ATXP032 DS-ATXP032–114I–4-2020 14.9 Overshoot/Undershoot Specifications 14.8 Program and Erase Characteristics — -40oC - +105 oC Note: All parameters are specified for industrial temperature range (-40°C to 105°C). Symbol Parameter(3) 1.70V - 1.95V Units Min Typ(1) Max(2) t PP Page program time (256 Bytes) ≤ 20k cycles 5 8.6 ms Page program time (256 Bytes) ≤ 100k cycles 5 12 t BP Byte program time 22 µs t BLKE Block erase time for ≤ 20k cycles 4 Kbytes 160 250 ms 32 Kbytes 1250 1800 64 Kbytes 2500 3600 Block erase time for ≤ 100k cycles 4 Kbytes 160 320 32 Kbytes 1250 2400 64 Kbytes 2500 4500 tCHPE Chip erase time 160 sec t SUSP Suspend time Program 10 20 µs Erase 25 40 t RES Resume time Program 10 20 µs Erase 12 20 t OTPP OTP security register program time 5 6 ms t WRSR Write status register time - volatile registers 01h, 31h commands 100 ns 71h command 10 µs t WRSRNV Write status register time - non-volatile registers (71h command) 40 200 ms Parameter 1.70V - 1.95V Units Min Max Maximum peak amplitude allowed for overshoot area 0.3 V Maximum peak amplitude allowed for undershoot area 0.3 V Maximum area above V CC 1.2 V*ns Maximum area below GND 1.2 V*ns |
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