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AT25SL321 Datasheet(PDF) 40 Page - Renesas Technology Corp

Part # AT25SL321
Description  32-Mbit, 1.7 V Minimum SPI Serial Flash Memory with Dual I/O, Quad I/O, and QPI Support
PDF  82 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT25SL321 Datasheet(HTML) 40 Page - Renesas Technology Corp

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DS-AT25SL321-112 Rev. J
Page 40
Nov 1, 2022
© 2022 Renesas Electronics
AT25SL321 Datasheet
8.17 Block Erase (20h)
The Block Erase command is to erase the data of the selected sector as being 1. The command is used for 4K-
byte Block. Prior to the Block Erase Command, the Write Enable command must be issued. The command is
initiated by driving the CS pin low and shifting the command code 20h followed a 24-bit Block address (A23-A0).
See Figure 29 and Figure 30. The CS pin must go high after the eighth bit of the last byte has been latched in,
otherwise, the Block Erase command can not be executed. After CS goes high, the self-timed Block Erase
command commences for a time duration of tSE. See Section 9.8, AC Electrical Characteristics.
While the Block Erase cycle is in progress, the Read Status Register command can still be accessed for checking
the status of the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other commands again. When the BUSY bit is asserted, the Write
Enable Latch (WEL) bit in the Status Register is cleared to 0.
Figure 29. Block Erase Command (SPI Mode)
Figure 30. Block Erase Command (QPI Mode)
SCK
CS
SI
1
02
3
4
6
579
829
21
0
30
31
Command
20h
24-Bit Address
Mode 3
Mode 0
Mode 3
Mode 0
MSB
23
22
SCK
CS
1
0
2345
Mode 3
Command
A23-16
A15-8
A7-0
Mode 0
8
12
11
15
14
10
9
13
16
20
18
19
23
22
17
21
0
4
2
3
7
6
1
5
67
Mode 3
Mode 0
MSB
IO
0
IO
1
IO
2
IO
3
20h



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