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AT25SL321 Datasheet(PDF) 71 Page - Renesas Technology Corp |
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AT25SL321 Datasheet(HTML) 71 Page - Renesas Technology Corp |
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71 / 82 page ![]() DS-AT25SL321-112 Rev. J Page 71 Nov 1, 2022 © 2022 Renesas Electronics AT25SL321 Datasheet 1. These parameters are characterized at -10C & +85C only Figure 65. Power-up Timing and Voltage Levels 1. These parameters are characterized only. Figure 66. ACC Program Acceleration Timing and Voltage Levels 9.4 Power-up Timing and Write Inhibit Threshold Parameter Symbol Min Max Units VCC (min) to CS Low tVSL(1) 10 µs Time Delay Before Write Command tPUW(1) 110 ms Write Inhibit Threshold Voltage VWI(1) 1.0 1.4 V 9.5 Program Acceleration via ACC Pin Parameter Symbol Min Max Units WP pin High Voltage VHH 1 8.5 9.5 V WP pin Voltage rise and fall time tVHH 1 2.2 µs WP at VHH and VIL or VIH to first command tWC 1 5µs |
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