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AT25SL321 Datasheet(PDF) 42 Page - Renesas Technology Corp

Part # AT25SL321
Description  32-Mbit, 1.7 V Minimum SPI Serial Flash Memory with Dual I/O, Quad I/O, and QPI Support
PDF  82 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT25SL321 Datasheet(HTML) 42 Page - Renesas Technology Corp

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DS-AT25SL321-112 Rev. J
Page 42
Nov 1, 2022
© 2022 Renesas Electronics
AT25SL321 Datasheet
8.19 64 kB Block Erase (D8h)
The Block Erase command is to erase the data of the selected block as being 1. The command is used for 64K-
byte Block erase operation. Prior to the Block Erase Command, a Write Enable command must be issued. The
command is initiated by driving the CS pin low and shifting the command code D8h followed a 24-bit block
address (A23-A0). (See Figure 33 and Figure 34). The CS pin must go high after the eighth bit of the last byte
has been latched in, otherwise, the Block Erase command can not be executed. After CS is driven high, the self-
timed Block Erase command commences for a time duration of tBE2. See Section 9.8, AC Electrical
Characteristics.
While the Block Erase cycle is in progress, the Read Status Register command can still be read the status of
the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished
and the device is ready to accept other commands again. When the BUSY bit is asserted, the Write Enable
Latch (WEL) bit in the Status Register is cleared to 0.
Figure 33. 64 kB Block Erase Command (SPI Mode)
Figure 34. 64 kB Block Erase Command (QPI Mode)
35
246
7
29
31
30
9
8
23
22
2
1
0
01
Mode 3
Mode 0
Mode 3
Mode 0
High-Impedance
IO
IO
SCK
CS
Command (D8h)
24-Bit Address
MSB
SCK
CS
1
0
2345
Mode 3
Command
D8h
A23-16
A15-8
A7-0
Mode 0
8
12
11
15
14
10
9
13
16
20
18
19
23
22
17
21
IO
0
4
2
3
7
6
1
5
67
Mode 3
Mode 0
MSB
IO
IO
IO



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