M58WT032KB datasheet(56/117 Pages) NUMONYX

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Program and erase times and endurance cycles

M58WTxxxKT, M58WTxxxKB

56/117

Program and erase times and endurance cycles

The program and erase times and the number of program/ erase cycles per block are shown

in Table 17. Exact erase times may change depending on the memory array condition. The

best case is when all the bits in the block or bank are at ‘0’ (preprogrammed). The worst

case is when all the bits in the block or bank are at ‘1’ (not preprogrammed). Usually, the

system overhead is negligible with respect to the erase time. In the M58WTxxxKT/B the

maximum number of program/ erase cycles depends on the VPP voltage supply used.

Table 17.

Program/erase times and endurance cycles(1)

Parameter

Condition

Min

Typ

Typical

after 100 k

W/E cycles

Max

Unit

Erase

Parameter block (4 Kword)(2)

0.3

2.5

Main block (32

Kword)

Preprogrammed

0.8

Not preprogrammed

Program(3)

Word

100

µs

Parameter block (4 Kword)

Main block (32 Kword)

300

Suspend latency

Program

µs

Erase

µs

Program/Erase

Cycles (per Block)

Main blocks

100 000

cycles

Parameter blocks

100 000

cycles

Erase

Parameter block (4 Kword)

0.25

2.5

Main block (32 Kword)

0.8

Program(3)

Word/ double word/ quadruple word(4)

100

µs

Parameter

block (4 Kword)

Quad-enhanced factory

Enhanced factory

Quadruple word(4)

Word

Main block (

32 Kword)

Quad-enhanced factory

Enhanced factory

360

Quadruple word(4)

Word

328

Bank (4 Mbit)

Quad-enhanced factory(4)

0.75

Quadruple word(4)

0.65

Program/erase

cycles (per block)

Main blocks

1000 cycles

Parameter blocks

2500 cycles

TA = –40 to 85 °C; VDD = VDDQ = 1.7 V to 2 V; VDDQ = 2.7 V to 3.3 V.

The difference between preprogrammed and not preprogrammed is not significant (< 30 ms).

Values are liable to change with the external system-level overhead (command sequence and Status Register polling

execution).

Measurements performed at 25°C. TA = 30 °C ±10 °C for quadruple word, double word and quadruple enhanced factory

program.

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