M58WT032KB datasheet(1/117 Pages) NUMONYX

Part #	M58WT032KB

Description	32- and 64-Mbit (횞16, multiple bank, burst) 1.8 V core, 3.0 V I/O supply Flash memories

PDF	117 Pages

Scroll/Zoom	100%

Manufacturer	NUMONYX [Numonyx B.V]

Direct Link	http://www.numonyx.com

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1 / 117 page

March 2008

Rev 2

1/117

1

M58WT032KT M58WT064KT

M58WT032KB M58WT064KB

32- and 64-Mbit (×16, multiple bank, burst)

1.8 V core, 3.0 V I/O supply Flash memories

Features

■ Supply voltage

–VDD = 1.7 V to 2 V for program, erase and

read

–VDDQ = 2.7 V to 3.3 V for I/O buffers

–VPP = 9 V for fast program

■ Synchronous/asynchronous read

– Synchronous burst read mode: 52 MHz

– Asynchronous/synchronous page read

mode

– Random access times: 70 ns

■ Synchronous burst read suspend

■ Programming time

– 10 µs by word typical for fast factory

program

– Double/quadruple word program option

– Enhanced factory program options

■ Memory blocks

– Multiple bank memory array: 4 Mbit banks

– Parameter blocks (top or bottom location)

■ Dual operations

– Program erase in one bank while read in

others

– No delay between read and write

operations

■ Block locking

– All blocks locked at power-up

– Any combination of blocks can be locked

–WP for block lock-down

■ Security

– 128-bit user programmable OTP cells

– 64-bit unique device number

■ Common Flash interface (CFI)

■ 100 000 program/erase cycles per block

■ Electronic signature

– Manufacturer code: 20h

– Device codes:

M58WT032KT (top): 8866h

M58WT032KB (bottom): 8867h

– M58WT064KT (top): 8810h

M58WT064KB (bottom): 8811h

■ ECOPACK® package available

TFBGA88 (ZAQ)

8 × 10 mm

FBGA

www.numonyx.com

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M58WT032KB Datasheet(PDF) 1 Page - Numonyx B.V

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