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M58WT032KB Datasheet(PDF) 60 Page - Numonyx B.V

Part # M58WT032KB
Description  32- and 64-Mbit (횞16, multiple bank, burst) 1.8 V core, 3.0 V I/O supply Flash memories
PDF  117 Pages
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

M58WT032KB Datasheet(HTML) 60 Page - Numonyx B.V

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DC and AC parameters
M58WTxxxKT, M58WTxxxKB
60/117
Table 21.
DC characteristics - currents
Symbol
Parameter
Test condition
Min
Typ
Max
Unit
ILI
Input leakage current
0V
≤VIN ≤VDDQ
±2
µA
ILO
Output leakage current
0V
≤VOUT ≤VDDQ
±10
µA
IDD1
Supply current
asynchronous read (f = 5 MHz)
E = VIL, G = VIH
10
20
mA
Supply current
synchronous Read (f = 52 MHz)
4 word
18
20
mA
8 word
20
22
mA
16 word
25
27
mA
Continuous
28
30
mA
IDD2
Supply current
(reset/power-down)
RP = VSS ± 0.2 V
15
50
µA
IDD3
Supply current (standby)
E = VDDQ ± 0.2 V,
K = VSS
15
50
µA
IDD4
Supply current (automatic
standby)
E = VIL, G = VIH
15
50
µA
IDD5
(1)
1.
Sampled only, not 100% tested.
Supply current (program)
VPP = VPPH
815
mA
VPP = VDD
15
40
mA
Supply current (erase)
VPP = VPPH
815
mA
VPP = VDD
15
40
mA
IDD6
(1)(2)
2.
VDD dual operation current is the sum of read and program or erase currents.
Supply current
(dual operations)
Program/erase in one
bank, asynchronous read
in another bank
25
60
mA
Program/erase in one
bank, synchronous read
(continuous burst 66
MHz) in another bank
43
70
mA
IDD7
(1)
Supply current program/ erase
suspended (standby)
E = VDDQ ± 0.2 V,
K = VSS
15
50
µA
IPP1
(1)
VPP supply current (program)
VPP = VPPH
510
mA
VPP = VDD
0.2
5
µA
VPP supply current (erase)
VPP = VPPH
510
mA
VPP = VDD
0.2
5
µA
IPP2
VPP supply current (read)
VPP = VPPH
100
400
µA
VPP ≤VDD
0.2
5
µA
IPP3
(1)
VPP supply current (standby)
VPP ≤VDD
0.2
5
µA



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