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DRV8353FSRTAR Datasheet(PDF) 39 Page - Texas Instruments |
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DRV8353FSRTAR Datasheet(HTML) 39 Page - Texas Instruments |
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39 / 97 page  INLx Control Inputs INHx Digital Core Level Shifters VCP 150 k VGS + GHx SHx VDRAIN Level Shifters VGLS 150 k VGS + GLx SLx/SPx ± ± Figure 8-19. Gate Driver Block Diagram 8.3.1.4.1 IDRIVE: MOSFET Slew-Rate Control The IDRIVE component implements adjustable gate-drive current to control the MOSFET VDS slew rates. The MOSFET VDS slew rates are a critical factor for optimizing radiated emissions, energy and duration of diode recovery spikes, dV/dt gate turnon leading to shoot-through, and switching voltage transients related to parasitics in the external half-bridge. IDRIVE operates on the principal that the MOSFET VDS slew rates are predominately determined by the rate of gate charge (or gate current) delivered during the MOSFET QGD or Miller charging region. By allowing the gate driver to adjust the gate current, it can effectively control the slew rate of the external power MOSFETs. IDRIVE allows the DRV835xF family of devices to dynamically switch between gate drive currents either through a register setting on SPI devices or the IDRIVE pin on hardware interface devices. The SPI devices provide 16 IDRIVE settings ranging between 50-mA to 1-A source and 100-mA to 2-A sink. Hardware interface devices provides 7 IDRIVE settings between the same ranges. The gate drive current setting is delivered to the gate during the turnon and turnoff of the external power MOSFET for the tDRIVE duration. After the MOSFET turnon or turnoff, the gate driver switches to a smaller hold IHOLD current to improve the gate driver efficiency. Additional details on the IDRIVE settings are described in the Section 8.6 section for the SPI devices and in the Section 8.3.3 section for the hardware interface devices. 8.3.1.4.2 TDRIVE: MOSFET Gate Drive Control The TDRIVE component is an integrated gate-drive state machine that provides automatic dead time insertion through switching handshaking, parasitic dV/dt gate turnon prevention, and MOSFET gate-fault detection. The first component of the TDRIVE state machine is automatic dead-time insertion. Dead time is period of time between the switching of the external high-side and low-side MOSFETs to make sure that they do not cross conduct and cause shoot-through. The DRV835xF family of devices use VGS voltage monitors to measure the MOSFET gate-to-source voltage and determine the correct time to switch instead of relying on a fixed time value. This feature allows the gate-driver dead time to adjust for variation in the system such a temperature drift and variation in the MOSFET parameters. An additional digital dead time (tDEAD) can be inserted and is adjustable through the registers on SPI devices. www.ti.com DRV8350F, DRV8353F, DRV8350RF, DRV8353RF SLVSFV1 – SEPTEMBER 2020 Copyright © 2020 Texas Instruments Incorporated Submit Document Feedback 39 Product Folder Links: DRV8350F DRV8353F DRV8350RF DRV8353RF |
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