DRV8353FSRTAR datasheet(11/97 Pages) TI

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7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±1000

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±500

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as

±2000 V may actually have higher performance.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ±500

V may actually have higher performance.

7.3 Recommended Operating Conditions

at TA = –40°C to +125°C (unless otherwise noted)

MIN

MAX

UNIT

GATE DRIVER

VVM

Gate driver power supply voltage (VM)

VVDRAIN

Charge pump reference and drain voltage sense (VDRAIN)

100

Input voltage (ENABLE, GAIN, IDRIVE, INHx, INLx, MODE, nSCS, SCLK, SDI, VDS)

5.5

fPWM

Applied PWM signal (INHx, INLx)

200(1)

kHz

tSH

Switch-node slew rate range (SHx)

V/ns

IGATE_HS

High-side average gate-drive current (GHx)

25(1)

IGATE_LS

Low-side average gate-drive current (GLx)

25(1)

IDVDD

External load current (DVDD)

10(1)

VVREF

Reference voltage input (VREF)

5.5

ISO

Shunt amplifier output current (SOx)

VOD

Open drain pullup voltage (nFAULT, SDO)

5.5

IOD

Open drain output current (nFAULT, SDO)

BUCK REGULATOR

VVIN

Power supply voltage (VIN)

DRV835xF

Operating ambient temperature

–40

125

°C

Operating junction temperature

–40

150

°C

(1)

Power dissipation and thermal limits must be observed.

7.4 Thermal Information

THERMAL METRIC(1)

DRV8350F

DRV8353F

DRV835xRF

UNIT

RTV (WQFN)

RTA (WQFN)

RGZ (VQFN)

32 PINS

40 PINS

48 PINS

RθJA

Junction-to-ambient thermal resistance

29.2

26.1

24.7

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

15.2

13.1

12.0

°C/W

RθJB

Junction-to-board thermal resistance

9.2

8.4

7.1

°C/W

ψJT

Junction-to-top characterization parameter

0.1

°C/W

ψJB

Junction-to-board characterization parameter

9.2

8.4

7.1

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

1.2

1.1

0.8

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

www.ti.com

DRV8350F, DRV8353F, DRV8350RF, DRV8353RF

SLVSFV1 – SEPTEMBER 2020

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DRV8353FSRTAR Datasheet(PDF) 11 Page - Texas Instruments

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