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HD6433644R Datasheet(PDF) 159 Page - Renesas Technology Corp |
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HD6433644R Datasheet(HTML) 159 Page - Renesas Technology Corp |
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159 / 549 page ![]() Section 6 ROM Rev. 6.00 Sep 12, 2006 page 139 of 526 REJ09B0326-0600 Flowchart for Erasing Multiple Blocks Start End of erase Erase error Set erase block register (set bit for block to be erased to 1) Write 0 data in all addresses to be erased (prewrite)*1 Select erase mode (E bit = 1 in FLMCR) n = 1 Wait (x) ms *5 Clear E bit Erasing halts No No No NG No No No OK Yes Yes Yes Yes Yes Yes Enable watchdog timer *2 Disable watchdog timer Wait (tvs1) µs *6 Dummy write to verify address *3 (flash memory latches address) Set block start address as verify address Erase-verify next block Select erase-verify mode (EV bit = 1 in FLMCR) Wait (tvs2) µs *6 Clear EBR bit for erase block Clear EV bit Address + 1 → address n + 1 → n Erase-verify next block Double the erase time (x × 2 → x) Verify *4 (read data H'FF?) Last address of block? Erase-verify completed for all erase blocks? Erase-verify completed for all erase blocks? All erase blocks erased? (EBR1 = EBR2 = 0?) n ≥ N? *6 n ≥ 4? Notes: 1. Program all addresses to be erased by following the prewrite flowchart. 2. Set the timer overflow interval to the initial value shown in table 6.13. 3. For the erase-verify dummy write, write H'FF using a byte transfer instruction. 4. For the erase-verify operation, read the data using a byte transfer instruction. When erasing multiple blocks, clear the erase block register bits for erased blocks and perform additional erasing only for unerased blocks. 5. Erase time x is successively incremented to initial set value × 2n–1 (n = 1 to 4), and is fixed from the 4th time onward. An initial value of 6.25 ms or less should be set, and the time for one erasure should be 50 ms or less. 6. tvs1: 4 µs or more tvs2: 2 µs or more N: 602 (set N so that the total erase time does not exceed 30 s) Figure 6.16 Multiple-Block Erase Flowchart |
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