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TPS66021 Datasheet(PDF) 4 Page - Texas Instruments

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Part # TPS66021
Description  TPS6602x Integrated Source and Sink Power Multiplexer with VBUS LDO Regulator
PDF  38 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TPS66021 Datasheet(HTML) 4 Page - Texas Instruments

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TPS66020, TPS66021
SLVSEW8 – AUGUST 2019
www.ti.com
Product Folder Links: TPS66020 TPS66021
Submit Documentation Feedback
Copyright © 2019, Texas Instruments Incorporated
Pin Functions (continued)
Pin
I/O
Reset State Description
Name
No.
VBUS
A2, B2, B3,
C2, C3, D2,
D3, E2, E3,
F2, F3, G2
Power
-
5-V to 20-V nominal input supply to PPHV or 5-V output supply from PP5V. Bypass
with capacitance CVBUS to GND.
VIN
G4
Power
-
Device input supply. Bypass with capacitance CVIN to GND.
VLDO
G3
Power
-
VIN supply or VBUS LDO regulated supply output from power multipexer. Bypass
with capacitance CVLDO to GND.
GND
B4
Ground
-
Ground. Connect all pins to ground plane.
OVP
F4
Analog
-
Selects VBUS OVP. Tie pin to VBUS resistor divider output to set desired VBUS
OVP level. Tie pin to GND to remove VBUS OVP function.
EN1
A3
Digital Input
Pull-down
Enable control signal for PPHV Sink and PP5V Source paths. Internal pull-down.
EN0
G1
Digital Input
Pull-down
Enable control signal for PPHV Sink and PP5V Source paths. Internal pull-down.
IREF
A4
Analog
Used to set the PP5V source path current limit bias using an external resistor tied
to GND.
FLT
A1
Digital
Output
Hi-Z
Fault Output Indicator. Active low. This pin is a true open-drain (no PMOS). Float
pin when unused.
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltage values are with respect to network GND. All GND pins must be connected directly to the GND plane of the board.
(3)
For VBUS, a TVS protection with a break down voltage falling between the Recommended and Absolute maximum ratings is
recommended, such as the TVS2200.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
PARAMETER
MIN
MAX
UNIT
Terminal voltage range (2)
PP5V, EN0, EN1, FLT, VIN, VLDO
–0.3
6.2
V
Terminal voltage range (2)
OVP
–0.3
VBUS
V
Terminal voltage range (2)
VBUS, power path disabled (stand off voltage)
–0.5
32
V
Terminal voltage range (2)
VBUS, power path enabled(3)
–0.5
26
V
Terminal voltage range (2)
PPHV
–0.3
26
V
Terminal voltage range (2)
IREF
–0.3
4.5
V
Terminal positive source current IREF
Internally limited
mA
Terminal positive source current
VLDO sourced from VBUS VLDO
Internally limited
mA
VLDO sourced from VIN
100
mA
Storage temperature
–55
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±1000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±500



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