TPS66021 datasheet(8/38 Pages) TI1

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TPS66020, TPS66021

SLVSEW8 – AUGUST 2019

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Power Path Supervisory (continued)

Operating under these conditions unless otherwise noted: -10

℃ ≤ TJ ≤ 125 ℃, 2.85V ≤ VVIN ≤ 5.5V, RIREF = 75 kΩ ±1%

overall tolerance

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

tVIN_STABLE

When VIN is above UV_VIN_R for this

duration, VIN is considered valid. If

device is being powered by VBUS LDO,

it will then switch to VIN supply and

VBUS LDO will be disabled.

6.9 VBUS LDO Characteristics

Operating under these conditions unless otherwise noted: -10

℃ ≤ TJ ≤ 125 ℃, 2.85V ≤ VVIN ≤ 5.5V, RIREF = 75 kΩ ±1%

overall tolerance

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V_VBUS_LDO_3V

Output voltage of VBUS LDO

For TPS66020: VIN = 0V, VBUS

≥ 3.8V, 0 ≤ I_VBUS_LDO ≤ 30mA

3.07

3.3

3.53

V_VBUS_LDO_5V

Output voltage of VBUS LDO

For TPS66021: VIN = 0V, VBUS

≥ 5.5V, 0 ≤ I_VBUS_LDO ≤ 30mA

4.65

5.0

5.35

VDO_VBUS_LDO_3V

Drop out voltage of VDD LDO

For TPS66020: VIN = 0V, VBUS

= 3.135 V, I_VBUS_LDO = 30 mA

0.5

VDO_VBUS_LDO_5V

Drop out voltage of VDD LDO

For TPS66021: VIN= 0V, VBUS =

4.75V, I_VBUS_LDO = 30 mA

0.5

ILIMIT_VBUS_LDO

Current limit VBUS LDO.

VBUS = 5.5V, VIN= 0V, VLDO =

100

tEN_VBUS_LDO

Turn-on time of VBUS LDO.

For TPS66020: I_VBUS_LDO =

30mA, CVLDO = 4.7 µF, VIN =

0V. Ramp VVBUS from 0 to 5V at

≥50V/ms. Measure from VBUS =

4.5V to VLDO = 3V.

1.2

For TPS66021: I_VBUS_LDO =

30mA, CVLDO = 4.7 µF, VIN =

0V. Ramp VVBUS from 0 to 7.5V at

≥50V/ms. Measure from VBUS =

7V to VLDO = 4.5V.

1.2

6.10 Thermal Shutdown Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

TSD_PP5V_R

Thermal Shutdown Temperature of

the PP5V power path.

Temperature rising

128

150

172

°C

TSD_PP5V_F

Thermal Shutdown Temperature of

the PP5V power path.

Temperature falling

115

140

165

°C

TSDH_PP5V

Thermal Shutdown hysteresis of

the PP5V power path.

°C

TSD_PPHV_R

Thermal Shutdown Temperature of

the PPHV power path.

Temperature rising

128

150

172

°C

TSD_PPHV_F

Thermal Shutdown Temperature of

the PPHV power path.

Temperature falling

115

140

165

°C

TSDH_PPHV

Thermal Shutdown hysteresis of

the PPHV power path.

°C

TSD_MAIN_R

Thermal Shutdown Temperature of

the entire device.

Temperature rising

140

160

178

°C

TSD_MAIN_F

Thermal Shutdown Temperature of

the entire device.

Temperature falling

120

140

160

°C

TSDH_MAIN

Thermal Shutdown hysteresis of

the entire device.

°C

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