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MAC7200 Datasheet(PDF) 467 Page - Freescale Semiconductor, Inc |
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MAC7200 Datasheet(HTML) 467 Page - Freescale Semiconductor, Inc |
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467 / 976 page ![]() Platform RAM Array Controller (PRAM_CTL) MAC7200 Microcontroller Family Reference Manual, Rev. 2 Freescale Semiconductor 389 If, during the data phase of a write, a read is requested on the AHB, the write is registered in the late write buffer allowing the read to take place without a wait state. The exception occurs when the read address matches the write address (see Section 19.2.3.6, “Late Write Hits”). The valid buffered or late write data is stored on the next available array address phase. This behavior is shown in Figure 19-6. Cycle 1 shows the AHB write address phase to address ’y’. In cycle 2, a read request to address ’z’ takes priority over the write and is executed to the array while the write data is stored to the late write buffer. The read in cycle 3 again takes precedence and the late write buffer is held. In cycle 4, the late write is stored. The controller executes in this way for both 32 and 64-bit sizes. Figure 19-5. 32/64-bit writes with reads Back to back 32/64-bit writes execute slightly differently in that the write in the AHB data phase is not stored to the late write buffer. Rather, the write data is stored directly to the array in the same cycle in which it is valid on the AHB. Figure 19-7 shows the write to ’addr y’ in cycle 2 executing to the array in the same cycle as the data is valid on the AHB. In addition, the write to ’addr y+32’ in cycle 3 is registered in the late write buffer since it is not followed by a 32 or 64-bit write transfer. 123456 7 addr y addr z addr z+4 addr y+4 nonseq nonseq seq nonseq idle word word word word data z data z+4 data y data y+4 addr z addr z+4 addr y addr y+4 2'b11 2'b10 2'b01 2'b10 2'b11 2'b01 data z data z+4 data y data y+4 data y data y+4 hclk haddr htrans hwrite hsize hready hrdata hwdata pram_addr pram_we pram_cs_b pram_rdata pram_wdata late write buffer |
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