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PXA270 Datasheet(PDF) 89 Page - Intel Corporation |
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PXA270 Datasheet(HTML) 89 Page - Intel Corporation |
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89 / 126 page ![]() Electrical, Mechanical, and Thermal Specification 6-25 Intel® PXA270 Processor AC Timing Specifications tffSDIS MD<31:0> read data input setup time from SDCLK<2:0> rise TBD — — 0.5 — — 0.5 — — ns — tffSDIH MD<31:0> read data input hold time from SDCLK<2:0> rise TBD — — 1.8 — — 1.8 — — ns — NOTES: 1. SDCLK0 may be configured to be CLK_MEM divided by 1, 2 or 4. SDCLK0 for synchronous flash memory can be at the slowest, divide-by-4 of the 26-MHz CLK_MEM. The fastest possible SDCLK0 is accomplished by configuring CLK_MEM at 104 MHz and clearing the MDREFR[K0DB2] or MDREFR[K0DB4] bit fields. 2. SDCLK0 frequency equals CLK_MEM frequency (MDREFR[K0DB4] and MDREFR[K0DB2] bit fields are clear) 3. SDCLK0 frequency equals CLK_MEM/2 frequency (MDREFR[K0DB2] is set and MDREFR[K0DB4] is clear). 4. SDCLK0 frequency equals CLK_MEM/4 frequency (MDREFR[K0DB4] is set). 5. Use SXCNFG[SXCLx] to configure the value for the frequency configuration code (FCC). 6. These numbers are for VCC_MEM = 1.8 V +20% / -5%, VOL = 0.4 V, and VOH = 1.4 V, with each applicable 4-bit field of the system memory buffer strength registers (BSCN TRP and BSCNTRN) set to TBD (msb:lsb) and each applicable SDCLK0 divide- by-2 and divide-by-4 register bits (MDREFR[K0DB2] and MDREFR[K0DB4]) clear. If MDREFR[K0DB2 is set, the corresponding output setup and hold times are increased and decreased, respectively, by 0.25 times the SDCLK0 period. 7. These numbers are for VCC_MEM = 2.5 V +/– 10%, VOL = 0.4 V, and VOH = 2.1 V, with each applicable 4-bit field of the system memory buffer strength registers (BSCNTRP and BSCNTRN) set to 0b1010 (msb:lsb) and each applicable SDCLK0 divide-by-2 and divide-by-4 register bit (MDREFR[K0DB2] and MDREFR[K0DB4]) clear. If MDREFR[K0DB2 is set, the corresponding output setup and hold times are increased and decreased, respectively, by 0.25 times the SDCLK0 period. 8. These numbers are for VCC_MEM = 3.3 V +/– 10%, VOL = 0.4 V, and VOH = 2.4 V, with each applicable 4-bit field of the system memory buffer strength registers (BSCNTRP and BSCNTRN) set to 0b1010 (msb:lsb) and each applicable SDCLK0 divide-by-2 and divide-by-4 register bit (MDREFR[K0DB2] and MDREFR[K0DB4]) clear. If MDREFR[K0DB2 is set, the corresponding output setup and hold times are increased and decreased, respectively, by 0.25 times the SDCLK0 period. Table 6-17. Synchronous Flash Read AC Specifications (Sheet 2 of 2) Symbols Parameters MIN TYP MAX MIN TYP MAX MIN TYP MAX Units |
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